BSZ0904NSIATMA1 vs IAUCN08S7L033ATMA1 비교
다음의 상세 나란히 비교: BSZ0904NSIATMA1 제조: Infineon 및 IAUCN08S7L033ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSZ0904NSIATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.49 | $0.86 |
| Technology | OptiMOS (N-channel power MOSFET) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=4.5V | 4 mOhm | — |
| On-State Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Power Dissipation at Ta | 2.1 W | — |
| Power Dissipation at Tc | 37 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V (typical Infineon OptiMOS 7 limit) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical] |
| 동작 온도 범위 | -55C to +150C | -55°C to +175°C (TJ) |
| 패키지 | PG-TSDSON-8-FL (PQFN 3.3x3.3) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| 실장 유형 | Surface Mount | Surface Mount |
| Integrated Schottky-like Diode | Yes (monolithic) | — |
| Avalanche Rated | 100% avalanche tested | — |
| Qualification | JEDEC qualified for target applications | Automotive Grade (per Infineon datasheet header) |
| Lead Plating | Pb-free | — |
| RoHS 상태 | Compliant | Compliant |
| 할로겐 프리 | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020, typical for this package) |