BSZ110N08NS5ATMA1 vs BSZ096N10LS5ATMA1 Vergleich
Detaillierter Direktvergleich von BSZ110N08NS5ATMA1 von Infineon und BSZ096N10LS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSZ110N08NS5ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,44 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | OptiMOS 5 N-Channel Power MOSFET | OptiMOS 5 trench MOSFET |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc | 40 A | — |
| On-Resistance RDS(on) max | 11 mΩ | 9.6 mΩ at VGS=10 V |
| Power Dissipation (PD) at Tc | 50 W | — |
| Gehäuse | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Polarity | N-Channel | N-Channel |
| Configuration | Single MOSFET | — |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C (junction) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (VDS max) | — | 100 V |
| Gate-Source Voltage (VGS max) | — | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 °C) | — | 40 A |
| Maximum Silicon Drain Current (ID max) | — | 62 A |
| Pulse Drain Current (ID,pulse) | — | 160 A |
| Total Power Dissipation (Ptot, TC=25 °C) | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | Logic-level (low single-volt range) |
| Diode Continuous Forward Current (IS) | — | 40 A (TC=25 °C) |
| Diode Forward Voltage (VSD) | — | 0.85 V typ, 1.2 V max at IF=20 A |
| Gate Drive | — | Logic-level compatible |
| ESD Protection | — | Yes (gate-integrated) |
| Packaging Code | — | ATMA1 (tape and reel) |