BSZ110N08NS5ATMA1 vs BSZ096N10LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ110N08NS5ATMA1 by Infineon and BSZ096N10LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ110N08NS5ATMA1
BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon
BSZ110N08NS5ATMA1 β ActiveInfineon
BSZ096N10LS5ATMA1 - 100V 9.6mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ110N08NS5ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.44 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | β |
| Technology | OptiMOS 5 N-Channel Power MOSFET | OptiMOS 5 trench MOSFET |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Tc | 40 A | β |
| On-Resistance RDS(on) max | 11 mΞ© | 9.6 mΞ© at VGS=10 V |
| Power Dissipation (PD) at Tc | 50 W | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | N-Channel | N-Channel |
| Configuration | Single MOSFET | β |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 Β°C to +150 Β°C (junction) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Product Family | β | OptiMOS 5 |
| Drain-Source Voltage (VDS max) | β | 100 V |
| Gate-Source Voltage (VGS max) | β | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 Β°C) | β | 40 A |
| Maximum Silicon Drain Current (ID max) | β | 62 A |
| Pulse Drain Current (ID,pulse) | β | 160 A |
| Total Power Dissipation (Ptot, TC=25 Β°C) | β | 69 W |
| Gate Threshold Voltage VGS(th) | β | Logic-level (low single-volt range) |
| Diode Continuous Forward Current (IS) | β | 40 A (TC=25 Β°C) |
| Diode Forward Voltage (VSD) | β | 0.85 V typ, 1.2 V max at IF=20 A |
| Gate Drive | β | Logic-level compatible |
| ESD Protection | β | Yes (gate-integrated) |
| Packaging Code | β | ATMA1 (tape and reel) |