BSZ110N08NS5ATMA1 vs BSZ150N10LS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSZ110N08NS5ATMA1 von Infineon und BSZ150N10LS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ110N08NS5ATMA1 | BSZ150N10LS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,44 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | OptiMOS 5 N-Channel Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc | 40 A | — |
| On-Resistance RDS(on) max | 11 mΩ | 15 mΩ |
| Power Dissipation (PD) at Tc | 50 W | — |
| Gehäuse | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Configuration | Single MOSFET | — |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL moisture sensitivity level] |
| Part Number | — | BSZ150N10LS3GATMA1 |
| Technology / Family | — | OptiMOS 3 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25 °C) | — | 40 A |
| Power Dissipation (TA=25 °C) | — | 2.1 W |
| Verlustleistung (TC=25°C) | — | 63 W |
| Operating Temperature Range (TJ) | — | -55 °C to +150 °C |
| Gate Threshold VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Lead-Free / Reflow | — | Yes (lead-free, 260 °C peak reflow compatible) |