BSZ110N08NS5ATMA1 vs BSZ150N10LS3GATMA1 Comparison

Detailed side-by-side comparison of BSZ110N08NS5ATMA1 by Infineon and BSZ150N10LS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 βœ“ Active
Infineon
BSZ150N10LS3GATMA1

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSZ110N08NS5ATMA1 BSZ150N10LS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.44 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 β€”
Technology OptiMOS 5 N-Channel Power MOSFET β€”
Drain-to-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at Tc 40 A β€”
On-Resistance RDS(on) max 11 mΞ© 15 mΞ©
Power Dissipation (PD) at Tc 50 W β€”
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TSDSON-8 (PQFN 3.3 x 3.3 mm)
Mounting Type Surface Mount Surface Mount
Polarity N-Channel β€”
Configuration Single MOSFET β€”
Gate Drive Voltage (VGS) [DATA_NEEDED: VGS rating] β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL moisture sensitivity level]
Part Number β€” BSZ150N10LS3GATMA1
Technology / Family β€” OptiMOS 3
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, Tc=25 Β°C) β€” 40 A
Power Dissipation (TA=25 Β°C) β€” 2.1 W
Power Dissipation (TC=25 Β°C) β€” 63 W
Operating Temperature Range (TJ) β€” -55 Β°C to +150 Β°C
Gate Threshold VGS(th) typ β€” [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg β€” [DATA_NEEDED: total gate charge Qg]
Lead-Free / Reflow β€” Yes (lead-free, 260 Β°C peak reflow compatible)

Datasheets & Resources

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