BSZ130N03LSGATMA1 vs BSZ150N10LS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSZ130N03LSGATMA1 von Infineon und BSZ150N10LS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSZ130N03LSGATMA1 | BSZ150N10LS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,41 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Ta=25 C) | 10 A | — |
| Kontinuierlicher Drain-Strom (TC=25°C) | 35 A | — |
| On-State Resistance Rds(on) max @ Vgs=10V | 13 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | 2.2 V | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 25 W | — |
| Gehäuse | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL moisture sensitivity level] |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogenfrei | Yes | — |
| Qualification | Industrial / Commercial (non-automotive) | — |
| Part Number | — | BSZ150N10LS3GATMA1 |
| Technology / Family | — | OptiMOS 3 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25 °C) | — | 40 A |
| On-Resistance RDS(on) max | — | 15 mΩ |
| Power Dissipation (TA=25 °C) | — | 2.1 W |
| Verlustleistung (TC=25°C) | — | 63 W |
| Operating Temperature Range (TJ) | — | -55 °C to +150 °C |
| Gate Threshold VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Lead-Free / Reflow | — | Yes (lead-free, 260 °C peak reflow compatible) |