BSZ130N03LSGATMA1 vs BSZ150N10LS3GATMA1 对比

详细并排对比 BSZ130N03LSGATMA1 出自 Infineon 和 BSZ150N10LS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 ✓ 量产中

规格对比

参数 BSZ130N03LSGATMA1 BSZ150N10LS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.41 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 25V / 30V —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Ta=25 C) 10 A —
连续漏极电流(TC=25°C) 35 A —
On-State Resistance Rds(on) max @ Vgs=10V 13 mOhm —
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA 2.2 V —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 25 W —
封装 PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) PG-TSDSON-8 (PQFN 3.3 x 3.3 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 C to +150 C (junction) —
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL moisture sensitivity level]
RoHS 状态 Compliant Compliant
Lead-Free Yes —
无卤 Yes —
Qualification Industrial / Commercial (non-automotive) —
Part Number — BSZ150N10LS3GATMA1
Technology / Family — OptiMOS 3
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc=25 °C) — 40 A
On-Resistance RDS(on) max — 15 mΩ
Power Dissipation (TA=25 °C) — 2.1 W
功耗(TC=25°C) — 63 W
Operating Temperature Range (TJ) — -55 °C to +150 °C
Gate Threshold VGS(th) typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Lead-Free / Reflow — Yes (lead-free, 260 °C peak reflow compatible)

数据手册与资源

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