BSZ900N20NS3GATMA1 vs BSC060N10NS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSZ900N20NS3GATMA1 von Infineon und BSC060N10NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSZ900N20NS3GATMA1 | BSC060N10NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,78 |
| Part Number | BSZ900N20NS3GATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΩ | — |
| Typical RDS(on) @ VGS=10V | 77 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD, Tc=25C) | 62.5 W | 125 W |
| Betriebs-Sperrschichttemperatur | -55C to +150C | -55 C to +150 C |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Gehäuse | PG-TSDSON-8 (TDSON-8 FL) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| ESD Protection | Yes (integrated) | — |
| Avalanche Energy Rated | Yes (EAS) | — |
| Part Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Ta) | — | 14.9 A |
| Continuous Drain Current (ID, Tc) | — | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6 mOhm |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 3.5 V |
| Lead-Free | — | Yes |
| Halogenfrei | — | [DATA_NEEDED: halogen status] |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss value] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS value] |