BSZ900N20NS3GATMA1 vs BSC060N10NS3GATMA1 Сравнение
Подробное сравнение бок о бок BSZ900N20NS3GATMA1 от Infineon и BSC060N10NS3GATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSZ900N20NS3GATMA1 | BSC060N10NS3GATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,48 | $0,78 |
| Part Number | BSZ900N20NS3GATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΩ | — |
| Typical RDS(on) @ VGS=10V | 77 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD, Tc=25C) | 62.5 W | 125 W |
| Рабочая температура перехода | -55C to +150C | -55 C to +150 C |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Корпус | PG-TSDSON-8 (TDSON-8 FL) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Статус RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| ESD Protection | Yes (integrated) | — |
| Avalanche Energy Rated | Yes (EAS) | — |
| Part Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Ta) | — | 14.9 A |
| Continuous Drain Current (ID, Tc) | — | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6 mOhm |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 3.5 V |
| Lead-Free | — | Yes |
| Без галогенов | — | [DATA_NEEDED: halogen status] |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss value] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS value] |