BTH60702EPVXUMA1 vs BTG7003A1EPWXUMA2 Vergleich

Detaillierter Direktvergleich von BTH60702EPVXUMA1 von Infineon und BTG7003A1EPWXUMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTH60702EPVXUMA1 BTG7003A1EPWXUMA2
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,21 $2,20
Manufacturer Infineon Technologies —
Product Family PROFET + 48V —
Funktion Smart high-side power switch (dual channel, 2 x 1:1) —
On-State Resistance (typ.) 60 mΩ per channel —
Continuous Load Current (per channel) 1.7 A —
Number of Channels 2 1
Configuration 2 x 1:1 (dual independent high-side) 1:1 N-Channel
Transistortyp N-channel vertical power MOSFET with charge pump —
Nominal Operating Voltage 48 V board net —
Maximum Supply Voltage 54 V —
Load Voltage Range [DATA_NEEDED: load voltage range] —
Current Sense / Diagnosis Yes (analog current-sense output) —
Protection Features Over-load, short-circuit, over-voltage, reverse battery, thermal shutdown —
Gehäuse PG-TSDSO-14 with exposed pad PG-TSDSO-14-22 (exposed pad)
Operating Temperature (junction) -40 °C to +150 °C (automotive grade) —
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL level] —
RoHS-Status Compliant Compliant
Switch Type — High-Side Power Switch
Maximum Continuous Load Current — 15.7 A
Operating Voltage Range — 6 V to 18 V
Load Dump Tolerance — 40 V
Idle Mode Quiescent Current — 50 µA
On-Resistance R_DS(on) — 10 mΩ (typ)
Control Input — Active High
Wire Protection — Integrated I²t
Functional Safety — ISO 26262 compliant
Betriebstemperatur — -40C to +150C (TJ)

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