BTS426L1E3062AAUMA1 vs BTG7003A1EPWXUMA2 Vergleich
Detaillierter Direktvergleich von BTS426L1E3062AAUMA1 von Infineon und BTG7003A1EPWXUMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BTG7003A1EPWXUMA2 - 15.7A PROFET Wire Guard High-Side Switch | Infineon
BTG7003A1EPWXUMA2 ✓ AktivSpezifikationsvergleich
| Parameter | BTS426L1E3062AAUMA1 | BTG7003A1EPWXUMA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,35 | $2,20 |
| Manufacturer | Infineon Technologies | — |
| Product Family | Classic PROFET 12V | — |
| Funktion | Smart High-Side Power Switch | — |
| Topologie | N-Channel Vertical Power FET with Charge Pump | — |
| Anzahl der Ausgänge | 1 | — |
| Ausgangskonfiguration | High-Side | — |
| Typical On-State Resistance (RDS(on)) | 5 mΩ | — |
| Continuous Load Current | 7 A | — |
| Nominal Operating Voltage | 12 V (automotive) | — |
| Input Type | CMOS-compatible, ground-referenced | — |
| Diagnostic Output | Yes (ST pin, ground-referenced feedback) | — |
| Embedded Protections | Overload, Thermal Shutdown, Overvoltage Clamp, ESD | — |
| Technology | Smart SIPMOS, monolithic | — |
| Gehäuse | PG-TO263-5-2 (DPAK-5, surface mount) | PG-TSDSO-14-22 (exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -40 °C to +150 °C [DATA_NEEDED: exact Tj limit per datasheet section] | — |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q100 (per Classic PROFET 12V family) | — |
| Switch Type | — | High-Side Power Switch |
| Number of Channels | — | 1 |
| Configuration | — | 1:1 N-Channel |
| Maximum Continuous Load Current | — | 15.7 A |
| Operating Voltage Range | — | 6 V to 18 V |
| Load Dump Tolerance | — | 40 V |
| Idle Mode Quiescent Current | — | 50 µA |
| On-Resistance R_DS(on) | — | 10 mΩ (typ) |
| Control Input | — | Active High |
| Wire Protection | — | Integrated I²t |
| Functional Safety | — | ISO 26262 compliant |
| Betriebstemperatur | — | -40C to +150C (TJ) |