BTS50101EKBXUMA1 vs BTS51202EKAXUMA1 Vergleich

Detaillierter Direktvergleich von BTS50101EKBXUMA1 von Infineon und BTS51202EKAXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTS50101EKBXUMA1 BTS51202EKAXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,78 $1,68
Product Type Smart High-Side Power Switch (PROFET) —
Number of Channels 1 2
On-State Resistance (RDS(on), typ) 16 mΩ —
On-State Resistance (RDS(on), max) 20 mΩ —
Continuous Load Current 10 A —
Operating Voltage Range 4.5 V to 28 V —
Load Dump Protection Yes (per automotive transient profile) —
Technology Smart6 (N-channel vertical MOSFET + charge pump) Smart6 (N-channel vertical MOSFET with charge pump)
Gehäuse PG-DSO-14-47 EP (DSO-14 with exposed pad) PG-DSO-14-40-EP (14-pin SOIC with exposed pad)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -40 °C to +150 °C (junction) —
Diagnostic Feature Current sense (analog) output pin —
Protection Features Overtemperature, overcurrent, overvoltage, reverse battery, ground loss —
MSL-Level 3 —
RoHS-Status Compliant Compliant
Topologie — Dual High-Side Switch (2 channels)
On-State Resistance (RDS(on)) — 120 mΩ (typical per channel)
Continuous Output Current — 2 A per channel (typical 2.5 A)
Operating Voltage (Vbb) — 8 V to 18 V
Load Type — Lamps up to 1×10 W, LEDs, resistive/inductive loads
Betriebstemperatur — -40 °C to +150 °C
Maximum Power Dissipation — 1800 mW
Integrated Protection — Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery
Diagnostic Output — Yes (status feedback pin)
Charge Pump — Integrated
Automotive Qualified — Yes

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