BTS50101EKBXUMA1 vs BTS51202EKAXUMA1 비교

다음의 상세 나란히 비교: BTS50101EKBXUMA1 제조: Infineon 및 BTS51202EKAXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTS50101EKBXUMA1 BTS51202EKAXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.78 $1.68
Product Type Smart High-Side Power Switch (PROFET) —
Number of Channels 1 2
On-State Resistance (RDS(on), typ) 16 mΩ —
On-State Resistance (RDS(on), max) 20 mΩ —
Continuous Load Current 10 A —
Operating Voltage Range 4.5 V to 28 V —
Load Dump Protection Yes (per automotive transient profile) —
Technology Smart6 (N-channel vertical MOSFET + charge pump) Smart6 (N-channel vertical MOSFET with charge pump)
패키지 PG-DSO-14-47 EP (DSO-14 with exposed pad) PG-DSO-14-40-EP (14-pin SOIC with exposed pad)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -40 °C to +150 °C (junction) —
Diagnostic Feature Current sense (analog) output pin —
Protection Features Overtemperature, overcurrent, overvoltage, reverse battery, ground loss —
MSL 레벨 3 —
RoHS 상태 Compliant Compliant
토폴로지 — Dual High-Side Switch (2 channels)
On-State Resistance (RDS(on)) — 120 mΩ (typical per channel)
Continuous Output Current — 2 A per channel (typical 2.5 A)
Operating Voltage (Vbb) — 8 V to 18 V
Load Type — Lamps up to 1×10 W, LEDs, resistive/inductive loads
동작 온도 — -40 °C to +150 °C
Maximum Power Dissipation — 1800 mW
Integrated Protection — Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery
Diagnostic Output — Yes (status feedback pin)
Charge Pump — Integrated
Automotive Qualified — Yes

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