CGD65B200S2 vs CGD65B240SH2 Vergleich
Detaillierter Direktvergleich von CGD65B200S2 von Cambridge GaN Devices und CGD65B240SH2 von Cambridge GaN Devices. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Cambridge GaN Devices
CGD65B200S2 - 650V 200mΩ ICeGaN™ GaN HEMT | Cambridge GaN Devices
CGD65B200S2 ✓ AktivCambridge GaN Devices
CGD65B240SH2 - 650V/55mΩ GaN HEMT ICeGaN® Transistor | CGD
CGD65B240SH2 ✓ AktivSpezifikationsvergleich
| Parameter | CGD65B200S2 | CGD65B240SH2 |
|---|---|---|
| Marke | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategorie | Transistors | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,70 | $2,10 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices (CGD) |
| Part Family | ICeGaN™ | — |
| Device Type | Enhancement-mode GaN-on-Si HEMT | — |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Typical R_DS(on) | 200 mΩ | — |
| Gate Drive (V_GS) | 12 V (typical) | — |
| Continuous Drain Current (I_D) | [DATA_NEEDED: continuous drain current] | 7 A (per DigiKey listing) |
| Gehäuse | 8-PowerVDFN (DFN5x6) | 8-DFN (5x6 mm) surface mount with thermal pad |
| Montageart | Surface Mount | Surface Mount |
| Operating Mode | Enhancement mode (normally-off) | Enhancement mode (normally-off) |
| Gate Technology | ICeGaN™ (gate input circuit on chip) | ICeGaN® (gate-injection, 0-20 V drive) |
| Material | GaN-on-Silicon | — |
| Polarity | N-Channel | — |
| Reel Variant | CGD65B200S2-T13 (Tape & Reel) | — |
| RoHS-Status | Compliant | — |
| Transistortyp | — | N-Channel GaN HEMT, enhancement mode |
| Drain-Source Voltage (V_DS,max) | — | 650 V |
| On-Resistance (R_DS(on)) | — | 55 mΩ (typical, per datasheet title block) |
| Current Sense Pin | — | Yes (integrated, shunt-free) |
| NL³ Circuit | — | Yes (integrated non-linear loss-less circuit) |
| Channel Type | — | N-Channel |
| Process Technology | — | GaN-on-silicon (GaN-on-Si) |
| Switching Frequency (typical app) | — | 200 kHz - 500 kHz (per CGD reference designs) |
| Typical Application | — | 65 W quasi-resonant flyback, PFC, SMPS |
| Compliance | — | [DATA_NEEDED: specific RoHS/REACH documentation] |