CGD65B200S2 vs CGD65B240SH2 比較
詳細な並列比較: CGD65B200S2 メーカー: Cambridge GaN Devices および CGD65B240SH2 メーカー: Cambridge GaN Devices。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Cambridge GaN Devices
CGD65B200S2 - 650V 200mΩ ICeGaN™ GaN HEMT | Cambridge GaN Devices
CGD65B200S2 ✓ 生産中仕様比較
| パラメータ | CGD65B200S2 | CGD65B240SH2 |
|---|---|---|
| ブランド | Cambridge GaN Devices | Cambridge GaN Devices |
| カテゴリ | Transistors | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.70 | $2.10 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices (CGD) |
| Part Family | ICeGaN™ | — |
| Device Type | Enhancement-mode GaN-on-Si HEMT | — |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Typical R_DS(on) | 200 mΩ | — |
| Gate Drive (V_GS) | 12 V (typical) | — |
| Continuous Drain Current (I_D) | [DATA_NEEDED: continuous drain current] | 7 A (per DigiKey listing) |
| パッケージ | 8-PowerVDFN (DFN5x6) | 8-DFN (5x6 mm) surface mount with thermal pad |
| 実装タイプ | Surface Mount | Surface Mount |
| Operating Mode | Enhancement mode (normally-off) | Enhancement mode (normally-off) |
| Gate Technology | ICeGaN™ (gate input circuit on chip) | ICeGaN® (gate-injection, 0-20 V drive) |
| Material | GaN-on-Silicon | — |
| Polarity | N-Channel | — |
| Reel Variant | CGD65B200S2-T13 (Tape & Reel) | — |
| RoHS ステータス | Compliant | — |
| トランジスタタイプ | — | N-Channel GaN HEMT, enhancement mode |
| Drain-Source Voltage (V_DS,max) | — | 650 V |
| On-Resistance (R_DS(on)) | — | 55 mΩ (typical, per datasheet title block) |
| Current Sense Pin | — | Yes (integrated, shunt-free) |
| NL³ Circuit | — | Yes (integrated non-linear loss-less circuit) |
| Channel Type | — | N-Channel |
| Process Technology | — | GaN-on-silicon (GaN-on-Si) |
| Switching Frequency (typical app) | — | 200 kHz - 500 kHz (per CGD reference designs) |
| Typical Application | — | 65 W quasi-resonant flyback, PFC, SMPS |
| Compliance | — | [DATA_NEEDED: specific RoHS/REACH documentation] |