CY14B101KA-ZS25XI vs CY14B101KA-ZS45XI Vergleich
Detaillierter Direktvergleich von CY14B101KA-ZS25XI von Infineon und CY14B101KA-ZS45XI von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | CY14B101KA-ZS25XI | CY14B101KA-ZS45XI |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,70 | $6,40 |
| Speichertyp | nvSRAM (Non-Volatile SRAM) with RTC | nvSRAM (nonvolatile SRAM) with RTC |
| Density | 1 Mbit (1024 kbit) | 1 Mbit (1049 kbits) |
| Speicherorganisation | 128K x 8 | 128K x 8 |
| Schnittstelle | Parallel | Parallel (SRAM-compatible) |
| Access Time | 25 ns | 45 ns |
| Versorgungsspannung | 2.7 V to 3.6 V (nominal 3 V) | 3 V (2.7 V to 3.6 V range class) |
| Store Cycles | [DATA_NEEDED: store cycle endurance] | — |
| SRAM Read/Write Endurance | Unlimited | — |
| RTC | Yes, with alarm and external 32.768 kHz crystal | — |
| Automatic STORE | Yes, on power fail via VCAP | — |
| Gehäuse | 44-TSOP II | 44-pin TSOP II |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40C to +85C (industrial) | -40C to +85C (industrial, XI suffix) |
| Technology | QuantumTrap non-volatile elements | CMOS with QuantumTrap nonvolatile elements |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| RoHS-Status | RoHS compliant (per package marking ZS25XI) | Compliant |
| Data Retention | — | 20 years |
| Real-Time Clock | — | Yes, integrated with backup |
| Package Standard | — | MO-119, SOIC-family TSOP II outline |
| Endurance (SRAM reads/writes) | — | Unlimited |
| Nonvolatile Store Endurance | — | [DATA_NEEDED: store endurance cycles] |
| Active Supply Current | — | [DATA_NEEDED: ICC active] |
| Standby Current | — | [DATA_NEEDED: ISB standby] |