CY14B101KA-ZS45XI vs CY14B101KA-ZS25XI Vergleich
Detaillierter Direktvergleich von CY14B101KA-ZS45XI von Infineon und CY14B101KA-ZS25XI von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | CY14B101KA-ZS45XI | CY14B101KA-ZS25XI |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,40 | $5,70 |
| Speichertyp | nvSRAM (nonvolatile SRAM) with RTC | nvSRAM (Non-Volatile SRAM) with RTC |
| Density | 1 Mbit (1049 kbits) | 1 Mbit (1024 kbit) |
| Speicherorganisation | 128K x 8 | 128K x 8 |
| Access Time | 45 ns | 25 ns |
| Versorgungsspannung | 3 V (2.7 V to 3.6 V range class) | 2.7 V to 3.6 V (nominal 3 V) |
| Schnittstelle | Parallel (SRAM-compatible) | Parallel |
| Data Retention | 20 years | — |
| Real-Time Clock | Yes, integrated with backup | — |
| Technology | CMOS with QuantumTrap nonvolatile elements | QuantumTrap non-volatile elements |
| Gehäuse | 44-pin TSOP II | 44-TSOP II |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40C to +85C (industrial, XI suffix) | -40C to +85C (industrial) |
| RoHS-Status | Compliant | RoHS compliant (per package marking ZS25XI) |
| Package Standard | MO-119, SOIC-family TSOP II outline | — |
| Endurance (SRAM reads/writes) | Unlimited | — |
| Nonvolatile Store Endurance | [DATA_NEEDED: store endurance cycles] | — |
| Active Supply Current | [DATA_NEEDED: ICC active] | — |
| Standby Current | [DATA_NEEDED: ISB standby] | — |
| Store Cycles | — | [DATA_NEEDED: store cycle endurance] |
| SRAM Read/Write Endurance | — | Unlimited |
| RTC | — | Yes, with alarm and external 32.768 kHz crystal |
| Automatic STORE | — | Yes, on power fail via VCAP |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |