EDB1332BDBH-1DAUT-F-D vs EDB2432B4MA-1DAUT-F-D Vergleich
Detaillierter Direktvergleich von EDB1332BDBH-1DAUT-F-D von Micron Technology und EDB2432B4MA-1DAUT-F-D von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
EDB1332BDBH-1DAUT-F-D - 1Gbit LPDDR2 533MHz | Micron
EDB1332BDBH-1DAUT-F-D ✓ AktivMicron Technology
EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron
EDB2432B4MA-1DAUT-F-D ✓ AktivSpezifikationsvergleich
| Parameter | EDB1332BDBH-1DAUT-F-D | EDB2432B4MA-1DAUT-F-D |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,16 | $7,43 |
| Speichertyp | SDRAM - Mobile LPDDR2 | Volatile Memory - DRAM |
| Speichergröße | 1 Gbit | 2 Gbit (64M x 32) |
| Speicherorganisation | 32M x 32 | 64M x 32 |
| Schnittstelle | Parallel | Parallel |
| Clock Frequency | 533 MHz | 533 MHz |
| Core Supply Voltage | 1.2 V | — |
| Supply Voltage Range | 1.14 V to 1.95 V | — |
| Access Mode | Single Bank Page Burst | — |
| Gehäuse | 134-VFBGA (10 x 11.5 mm) | 134-VFBGA (10 x 11.5 mm) |
| Number of Terminals | 134 | — |
| Montageart | Surface Mount | Surface Mount |
| Temperature Grade | Automotive | — |
| Package Shape | Rectangular | — |
| Packaging Suffix | -D (Dry Pack) | — |
| Moisture Sensitivity | Dry Pack (per -D suffix) | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | -40C to +125C (Automotive) |
| Technology | — | SDRAM - Mobile LPDDR2 |
| Package Construction | — | DDP (Double-Die Package) |
| Marking Code | — | D9WVG |
| Part Status | — | Active |
| Lead-Free Status | — | Lead free (-F suffix) |
| Halogen-Free Status | — | Halogen free (-F suffix) |
| Versorgungsspannung | — | [DATA_NEEDED: VDD/VDDQ supply voltage] |
| Write Cycle Time - Word, Page | — | [DATA_NEEDED: write cycle time] |