EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron
Teilenummer: EDB2432B4MA-1DAUT-F-D ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $9.29 | $9,29 |
| 10 | $8.83 | $88,30 |
| 100 | $8.36 | $836,00 |
| 500 | $7.9 | $3.950,00 |
| 1.000 | $7.43 | $7.430,00 |
EDB2432B4MA-1DAUT-F-D Übersicht
Mobile LPDDR2 SDRAM (Low Power Double Data Rate 2) is a member of the DRAM family of volatile memory designed for bandwidth-per-watt efficiency in battery-powered and thermally constrained systems. Within the memory hierarchy, LPDDR2 sits below LPDDR3/LPDDR4 in speed but offers lower power consumption and a simpler interface, making it a mainstay for embedded processors and applications processors that integrate an LPDDR2 memory controller.
Key features of the EDB2432B4MA-1DAUT-F-D include its 2 Gbit density in a single x32 parallel data path, 533 MHz clock operation for high sustained bandwidth, automotive-grade operating temperature support, and the compact 134-VFBGA footprint that minimizes PCB area in space-limited designs. The marking code for this device is D9WVG.
Architecturally, the device uses Micron's double-die package (DDP) construction, stacking two LPDDR2 dies within the single 134-ball package to reach the 2 Gbit density. The x32 organization provides a wide parallel data bus, which suits processors whose memory controllers are natively 32-bit and eliminates the need for byte-lane pairing of two x16 devices.
Typical applications include automotive infotainment and instrument clusters, telematics and ADAS sensor fusion modules, industrial HMI and embedded computing systems, and portable devices requiring low-power DRAM. The extended -40C to +125C rating makes this part especially appropriate for under-hood and high-temperature automotive environments.
A key design consideration is signal integrity on the high-speed LPDDR2 command/address and data buses: fly-by routing, careful length matching, and adherence to the datasheet VDDQ termination guidelines are required at 533 MHz operation. Verify controller compatibility for LPDDR2-S4 timing, including the 1.2V core supply domain.
This page synthesizes distributor pricing, drop-in alternatives within Micron's LPDDR2 family, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für EDB2432B4MA-1DAUT-F-D – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit EDB2432B4MA-1DAUT-F-D (gleiche Bauform und Footprint) – abweichend in Memory Size, Memory Type, Organization, Operating Temperature.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
EDB2432B4MA-1DAUT-F
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
EDB5432BEBH-1DAUT-F-D
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$2.45 / Stück
Datenblatt ansehen →EDB1332BDBH-1DAUT-F-D
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$2.16 / Stück
Datenblatt ansehen →EDB2432B4MA-1DAUT-F-D Grenzwerte & elektrische Eigenschaften
| Speichertyp | Volatile Memory - DRAM |
| Technology | SDRAM - Mobile LPDDR2 |
| Speichergröße | 2 Gbit (64M x 32) |
| Speicherorganisation | 64M x 32 |
| Clock Frequency | 533 MHz |
| Schnittstelle | Parallel |
| Gehäuse | 134-VFBGA (10 x 11.5 mm) |
| Package Construction | DDP (Double-Die Package) |
| Betriebstemperatur | -40C to +125C (Automotive) |
| Montageart | Surface Mount |
| Marking Code | D9WVG |
| Part Status | Active |
| Lead-Free Status | Lead free (-F suffix) |
| Halogen-Free Status | Halogen free (-F suffix) |
EDB2432B4MA-1DAUT-F-D ddp (double-die package) Pinbelegungsleitfaden
Pinbelegung für EDB2432B4MA-1DAUT-F-D (ddp (double-die package)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für EDB2432B4MA-1DAUT-F-D.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
EDB2432B4MA-1DAUT-F-D ist geeignet für 6 Anwendungs: Automotive Infotainment and Instrument Clusters, Telematics and ADAS Sensor Fusion Modules, Industrial HMI and Embedded Computing, Portable and Battery-Powered Devices, Networking and Edge IoT Gateways, Automotive Camera and Display ECUs.
Automotive Infotainment and Instrument Clusters
The EDB2432B4MA-1DAUT-F-D fits automotive infotainment and digital instrument cluster designs because its 2 Gbit (64M x 32) density stores map tiles, UI frame buffers, and multimedia assets, while the 533 MHz clock supplies the sustained bandwidth these graphics pipelines demand. The -40C to +125C automotive temperature rating per the -A suffix is essential for cockpit electronics exposed to direct solar load and cold-soak conditions. In a typical circuit, the 134-VFBGA device connects to the SoC's LPDDR2 controller over a short, length-matched 32-bit data bus with fly-by command/address routing. Because it is a single x32 DDP device, it halves command/address loading versus two x16 chips, easing signal integrity at speed, at the cost of a wider bus requiring more PCB layers.
Empfohlen
Telematics and ADAS Sensor Fusion Modules
Telematics control units and ADAS sensor-fusion nodes benefit from the EDB2432B4MA-1DAUT-F-D's combination of low-power LPDDR2 operation and -40C to +125C automotive rating. Buffering camera, radar, and GNSS data streams requires sustained write bandwidth; the 533 MHz x32 parallel interface delivers this from a single 2 Gbit device in a compact 10 x 11.5 mm footprint. On the PCB, the DRAM is placed close to the fusion SoC with controlled-impedance routing, and its DDP construction keeps density high without enlarging the assembly. The trade-off is that LPDDR2 power rail sequencing and the datasheet's termination guidance must be followed to prevent bus contention during warm boot in always-on telematics systems that wake periodically.
Empfohlen
Industrial HMI and Embedded Computing
Industrial human-machine interfaces and embedded computing modules use the EDB2432B4MA-1DAUT-F-D where its extended -40C to +125C range covers unconditioned factory floors and outdoor cabinets. The 2 Gbit capacity accommodates Linux-based HMI stacks with graphical UIs, and the 533 MHz clock sustains responsive screen updates over the 32-bit bus. In circuit, the device attaches directly to industrial SoCs with native LPDDR2 controllers; its x32 organization avoids pairing two x16 parts, reducing BOM count and layout complexity on dense carrier boards. The halogen-free, lead-free -F construction also aligns with industrial environmental compliance targets, though designers should confirm LPDDR2 support in their selected processor's memory controller before committing to the footprint.
Empfohlen
Portable and Battery-Powered Devices
Mobile LPDDR2 was designed for battery-powered systems, and the EDB2432B4MA-1DAUT-F-D brings that low-power architecture to portable instrumentation and rugged handhelds. LPDDR2's reduced I/O swing and power-down, self-refresh, and deep-power-down modes let the system keep 2 Gbit of working state alive with minimal current between active bursts. The 64M x 32 organization gives handheld application processors a wide, single-device bus, and the compact 134-VFBGA fits dense portable boards. Designers should exploit the self-refresh modes during idle periods and verify the datasheet's refresh interval settings at elevated temperatures, since refresh current is the dominant standby contributor in always-on portable designs above +85C ambient.
Empfohlen
Networking and Edge IoT Gateways
Edge IoT gateways and compact networking equipment use the EDB2432B4MA-1DAUT-F-D as working memory for packet buffering, TLS session state, and embedded Linux runtimes. The 2 Gbit (64M x 32) density and 533 MHz operation provide enough bandwidth to move data between WAN interfaces and local storage without becoming the bottleneck, while the 134-VFBGA's 10 x 11.5 mm footprint suits small fanless gateways. The device's parallel LPDDR2 interface connects directly to gateway SoCs that embed LPDDR2 controllers, and its DDP stacking keeps the memory area small on crowded router boards. Because gateways run continuously, designers should implement the controller's temperature-compensated refresh to balance retention reliability against standby power in enclosed, thermally limited enclosures.
Empfohlen
Automotive Camera and Display ECUs
Camera ECUs and display electronic control units in vehicles require DRAM that survives the harsh thermal zones near windshields and headlights, making the EDB2432B4MA-1DAUT-F-D's -40C to +125C rating decisive. The 533 MHz x32 interface buffers video frames from surround-view and driver-monitoring cameras before compression or transmission over automotive links. In a typical ECU, the 2 Gbit LPDDR2 sits beside the image-processing SoC with tightly matched trace lengths, and the single-package DDP design avoids the routing complexity of stacked discrete packages. Designers should budget for the DRAM's active current during simultaneous multi-camera capture and follow the manufacturer datasheet's ZQ calibration and termination recommendations to maintain eye margins over the full automotive temperature range.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für EDB2432B4MA-1DAUT-F-D – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | EDB2432B4MA-1DAUT-F | EDB5432BEBH-1DAUT-F-D | EDB1332BDBH-1DAUT-F-D |
|---|---|---|---|---|
| Package | 134-VFBGA (10 x 11.5 mm) | 134-VFBGA (10x11.5) - same | 134-VFBGA (10x11.5) - verify ballout | 134-VFBGA (10x11.5) - verify ballout |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Size | 2 Gbit (64M x 32) | 2 Gbit (64M x 32) | 4 Gbit | 1 Gbit |
| Technology | Mobile LPDDR2 SDRAM | Mobile LPDDR2 SDRAM | Mobile LPDDR2 SDRAM | Mobile LPDDR2 SDRAM |
| Clock Frequency | 533 MHz | 533 MHz | 533 MHz (-1D class) | 533 MHz (-1D class) |
| Operating Temperature | -40C to +125C (automotive -A code) | -40C to +125C | -40C to +125C (automotive -A code) | -40C to +125C (automotive -A code) |
| Lead-Free / Halogen-Free | Yes (-F suffix) | Yes (-F suffix) | Yes (-F suffix) | Yes (-F suffix) |
Wichtigste Unterscheidungsmerkmale
- Automotive temperature range in a compact x32 package (vs. EDB1332BDBH-1DAUT-F-D)
- Lower-cost 2 Gbit option versus the 4 Gbit sibling (vs. EDB5432BEBH-1DAUT-F-D)
Designhinweise
At the 533 MHz operating frequency, the LPDDR2 command/address and data buses require controlled-impedance routing (typically 50 ohm single-ended per datasheet guidance), length matching within the datasheet skew budget, and fly-by clock/CMD/ADDR topology when multiple devices are used. With this x32 single-device design, keep the 134-VFBGA within a few centimeters of the SoC, reference signals to a clean VDDQ plane, and place reference-voltage decoupling per the manufacturer datasheet. Simulate eye diagrams at the -1D speed grade before finalizing stackup.
LPDDR2 uses separate VDD (core) and VDDQ (I/O) domains; confirm the exact voltage values in the manufacturer datasheet before building the power tree, as the values were not available in the verified data for this entry. Decouple each ball-group supply with low-ESR ceramics placed adjacent to the package, and sequence rails per the controller requirements. In thermally enclosed automotive modules, account for refresh current at +125C, which increases as the temperature-compensated refresh rate rises above the standard interval.
The EDB2432B4MA-1DAUT-F-D is a double-die package (DDP): two LPDDR2 dies share the 134-ball ballout, so the memory controller must be configured for the resulting chip-select/row-address mapping. Do not assume a single-die x32 map. Additionally, verify the -A automotive temperature code in your sourcing - commercial variants of similar MPNs exist and will not meet the -40C to +125C requirement. Finally, because this is a legacy LPDDR2 family, secure long-term supply agreements early.
The 134-VFBGA (10 x 11.5 mm) has a 0.8 mm-class ball pitch requiring via-in-pad or dogbone fanout on typical 4-6 layer automotive boards. Dedicate at least one internal layer to a solid VDDQ reference plane under the memory, and keep the ZQ calibration resistor routing short and isolated from switching noise. Add the manufacturer-recommended ESD protection on externally accessible data lines in automotive environments.
Compliance-Informationen
Per Micron LPDDR2 part numbering decoded in the manufacturer datasheet: the -F suffix designates lead-free (RoHS compliant) and halogen-free construction; the -D suffix denotes a packaged device. REACH and conflict-minerals status not stated in the provided data.
