EP1S40F780C8N vs EP1S40F780I6N Vergleich
Detaillierter Direktvergleich von EP1S40F780C8N von Intel und EP1S40F780I6N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP1S40F780C8N | EP1S40F780I6N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Obsolete | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $130,00 | $89,50 |
| Family | Stratix | — |
| Series | EP1S | Stratix |
| Logic Elements | 41,250 | 41,250 |
| Embedded Memory | 3,423,744 bits | — |
| Embedded Multipliers | 615 (18-bit x 18-bit) | Yes (per DSP block) |
| Gehäuse | 780-ball FCBGA (FineLine BGA), 29 mm x 29 mm, 1 mm pitch | 780-FBGA (29 x 29 mm, 1.0 mm pitch) |
| Logic Family | CMOS | — |
| Supply Voltage (Core) | 1.5 V | — |
| Speed Grade | C8 (commercial) | — |
| Betriebstemperatur | 0 °C to +85 °C | -40C to +100C (industrial) |
| I/O Standard Support | LVDS, LVTTL, LVCMOS, SSTL, HSTL, PCI, PCI-X | — |
| Maximum LVDS Data Rate | 840 Mbps | — |
| PLL Blocks | Up to 12 | — |
| Speichertyp | TriMatrix (MRAM, M512, M4K blocks) | — |
| External Memory Interface | DDR, DDR-II, QDR, SDRAM | — |
| Configuration Method | Passive serial, Fast passive parallel, JTAG | SRAM-based, volatile |
| Design Software | Quartus II | — |
| RoHS-Status | Compliant | Compliant |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Logic Array Blocks (LABs) | — | 4,125 |
| Total RAM Bits | — | 3,423,744 |
| User I/O Pins | — | 615 |
| Core Voltage (VCCINT) | — | 1.425 V to 1.575 V |
| Number of I/O Banks | — | [DATA_NEEDED: number of I/O banks] |
| DSP Blocks | — | 12 |
| PLLs | — | [DATA_NEEDED: PLL count per Stratix handbook] |
| MSL-Level | — | 3 |
| Lead Free | — | Yes |
| Process Node | — | 150 nm CMOS |