EP1S40F780C8N vs EP1S40F780I6N 对比
详细并排对比 EP1S40F780C8N 出自 Intel 和 EP1S40F780I6N 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EP1S40F780C8N | EP1S40F780I6N |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | Obsolete | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $130.00 | $89.50 |
| Family | Stratix | — |
| Series | EP1S | Stratix |
| Logic Elements | 41,250 | 41,250 |
| Embedded Memory | 3,423,744 bits | — |
| Embedded Multipliers | 615 (18-bit x 18-bit) | Yes (per DSP block) |
| 封装 | 780-ball FCBGA (FineLine BGA), 29 mm x 29 mm, 1 mm pitch | 780-FBGA (29 x 29 mm, 1.0 mm pitch) |
| Logic Family | CMOS | — |
| Supply Voltage (Core) | 1.5 V | — |
| Speed Grade | C8 (commercial) | — |
| 工作温度 | 0 °C to +85 °C | -40C to +100C (industrial) |
| I/O Standard Support | LVDS, LVTTL, LVCMOS, SSTL, HSTL, PCI, PCI-X | — |
| Maximum LVDS Data Rate | 840 Mbps | — |
| PLL Blocks | Up to 12 | — |
| 存储器类型 | TriMatrix (MRAM, M512, M4K blocks) | — |
| External Memory Interface | DDR, DDR-II, QDR, SDRAM | — |
| Configuration Method | Passive serial, Fast passive parallel, JTAG | SRAM-based, volatile |
| Design Software | Quartus II | — |
| RoHS 状态 | Compliant | Compliant |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| Logic Array Blocks (LABs) | — | 4,125 |
| Total RAM Bits | — | 3,423,744 |
| User I/O Pins | — | 615 |
| Core Voltage (VCCINT) | — | 1.425 V to 1.575 V |
| Number of I/O Banks | — | [DATA_NEEDED: number of I/O banks] |
| DSP Blocks | — | 12 |
| PLLs | — | [DATA_NEEDED: PLL count per Stratix handbook] |
| MSL 等级 | — | 3 |
| Lead Free | — | Yes |
| Process Node | — | 150 nm CMOS |