EP2SGX60EF1152I4N vs EP2SGX60EF1152I3 Vergleich

Detaillierter Direktvergleich von EP2SGX60EF1152I4N von Intel und EP2SGX60EF1152I3 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Intel
EP2SGX60EF1152I4N EP2SGX60EF1152I4N - 60,440-LCell FPGA, 717 MHz | Intel

EP2SGX60EF1152I4N - 60,440-LCell FPGA, 717 MHz | Intel

EP2SGX60EF1152I4N ✓ Aktiv

Spezifikationsvergleich

Parameter EP2SGX60EF1152I4N EP2SGX60EF1152I3
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $365,00
Device Type FPGA —
Product Family Stratix II GX —
Logic Cells 60,440 —
Embedded Memory 2,544,192 bits —
I/O Count 534 —
Internal Frequency 717 MHz —
Versorgungsspannung 1.2 V —
Gehäuse 1,152-ball FBGA 1152-ball FBGA, 35 mm x 35 mm, 1 mm pitch
Package Type Other, 23 x 23 mm, 1 mm pitch, MS-034AAJ-1, FBGA-484 —
Pins 484 —
Device Technology 90 nm —
Logic Blocks 3,022 LABs —
Montageart Surface mount Surface Mount (BGA)
Operating Temperature Grade Industrial —
Compliance [DATA_NEEDED: compliance certification details] —
Transceiver Count [DATA_NEEDED: high-speed transceiver count] —
Configuration Memory [DATA_NEEDED: configuration memory specification] —
Package Pinout [DATA_NEEDED: complete ball-map pinout] —
Family — Stratix II GX
Series — EP2SGX60
Logic Elements (LEs) — 60,440
Adaptive Logic Modules (ALMs) — 30,220 (estimated from LEs)
Equivalent Logic Cells (CLBs) — 60,440
Embedded Memory (Bits) — 2,544,192 bits (per DigiKey listing for the I4N variant)
Maximum Internal Frequency — 717 MHz
Combinational Delay (per CLB) — 2.99 ns
Multi-Gigabit Transceivers — [DATA_NEEDED: exact count for EP2SGX60]
Maximum Transceiver Data Rate — 6.375 Gbps (per Stratix II GX family spec)
Total RAM Bits — 2,544,192 bits
Pin/Ball Count — 1152
Betriebstemperatur — -40C to +100C (Industrial, I3 speed grade)
Speed Grade — I3 (Industrial)
Configuration Mode — Enhanced (EPC) - fast parallel via external memory
Process Technology — 90 nm CMOS
RoHS-Status — [DATA_NEEDED: not in retrieved snippets]

Datenblätter & Ressourcen

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