EP3C40F780C8 vs EP3C40F780C7 Vergleich
Detaillierter Direktvergleich von EP3C40F780C8 von Intel und EP3C40F780C7 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP3C40F780C8 | EP3C40F780C7 |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | NRND |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $99,95 | $139,50 |
| Family | Cyclone III | Cyclone III |
| Series | EP3C40 | — |
| Logic Elements | 39,600 | — |
| Total Memory Bits | 1,161,216 bits (1134 Kbit) | 1,161,216 bits |
| Embedded Memory | M9K blocks, 486 Kbit total (per family datasheet) | — |
| Embedded 18x18 Multipliers | 126 | 126 |
| General Purpose PLLs | 4 | — |
| Global Clock Networks | 20 | — |
| Maximum User I/O Pins | 535 | — |
| Process Technology | 65 nm low-power CMOS | 60 nm TSMC low-power CMOS |
| Gehäuse | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (F780) |
| Speed Grade | C8 (commercial, -40C to +85C operating range per 'C' designator family convention) | C7 |
| User I/O Banks | [DATA_NEEDED: user I/O bank count] | — |
| Supported Memory Interfaces | DDR, DDR2, QDRII SRAM (via dedicated PHY) | — |
| Configuration | Serial (AS) / Parallel (AP) / JTAG | Active Serial / Passive Parallel (JTAG) |
| RoHS-Status | Compliant | Compliant |
| Montageart | Surface Mount (BGA) | — |
| Logic Elements (LE) | — | 39,600 |
| Number of Logic Cells | — | 39,600 |
| Number of PLLs | — | 4 |
| User I/O Count | — | 535 |
| I/O Banks | — | 8 |
| Package Dimensions | — | 29 x 29 mm |
| Ball Pitch | — | 1.0 mm |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V |
| Betriebstemperatur | — | 0C to +85C (Commercial) |
| MSL-Level | — | 3 (168 hours) |