EP3C40F780C8 vs EP3C40F780C7 Comparación
Comparación detallada lado a lado de EP3C40F780C8 por Intel y EP3C40F780C7 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP3C40F780C8 | EP3C40F780C7 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $99,95 | $139,50 |
| Family | Cyclone III | Cyclone III |
| Series | EP3C40 | — |
| Logic Elements | 39,600 | — |
| Total Memory Bits | 1,161,216 bits (1134 Kbit) | 1,161,216 bits |
| Embedded Memory | M9K blocks, 486 Kbit total (per family datasheet) | — |
| Embedded 18x18 Multipliers | 126 | 126 |
| General Purpose PLLs | 4 | — |
| Global Clock Networks | 20 | — |
| Maximum User I/O Pins | 535 | — |
| Process Technology | 65 nm low-power CMOS | 60 nm TSMC low-power CMOS |
| Encapsulado | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (F780) |
| Speed Grade | C8 (commercial, -40C to +85C operating range per 'C' designator family convention) | C7 |
| User I/O Banks | [DATA_NEEDED: user I/O bank count] | — |
| Supported Memory Interfaces | DDR, DDR2, QDRII SRAM (via dedicated PHY) | — |
| Configuration | Serial (AS) / Parallel (AP) / JTAG | Active Serial / Passive Parallel (JTAG) |
| Estado RoHS | Compliant | Compliant |
| Tipo de montaje | Surface Mount (BGA) | — |
| Logic Elements (LE) | — | 39,600 |
| Number of Logic Cells | — | 39,600 |
| Number of PLLs | — | 4 |
| User I/O Count | — | 535 |
| I/O Banks | — | 8 |
| Package Dimensions | — | 29 x 29 mm |
| Ball Pitch | — | 1.0 mm |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V |
| Temperatura de funcionamiento | — | 0C to +85C (Commercial) |
| Nivel MSL | — | 3 (168 hours) |