EP3C40F780C8 vs EP3C40F780C7N Vergleich
Detaillierter Direktvergleich von EP3C40F780C8 von Intel und EP3C40F780C7N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP3C40F780C8 | EP3C40F780C7N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $99,95 | $145,40 |
| Family | Cyclone III | Cyclone III |
| Series | EP3C40 | — |
| Logic Elements | 39,600 | 39,600 LE |
| Total Memory Bits | 1,161,216 bits (1134 Kbit) | — |
| Embedded Memory | M9K blocks, 486 Kbit total (per family datasheet) | — |
| Embedded 18x18 Multipliers | 126 | — |
| General Purpose PLLs | 4 | — |
| Global Clock Networks | 20 | 20 |
| Maximum User I/O Pins | 535 | — |
| Process Technology | 65 nm low-power CMOS | — |
| Gehäuse | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (FineLine BGA) |
| Speed Grade | C8 (commercial, -40C to +85C operating range per 'C' designator family convention) | 7 (C7, commercial) |
| User I/O Banks | [DATA_NEEDED: user I/O bank count] | — |
| Supported Memory Interfaces | DDR, DDR2, QDRII SRAM (via dedicated PHY) | — |
| Configuration | Serial (AS) / Parallel (AP) / JTAG | — |
| RoHS-Status | Compliant | — |
| Montageart | Surface Mount (BGA) | — |
| Total RAM Bits | — | 1,161,216 bits |
| Embedded Multipliers | — | 126 (18x18) |
| User I/Os | — | 535 |
| Process Node | — | 65 nm TSMC low-power |
| Betriebstemperatur | — | 0C to +85C (commercial) |
| Supply Voltage (Core) | — | 1.2 V |
| Configuration Method | — | JTAG, Active Serial, Passive Serial |
| PLLs | — | 4 |
| Lead-Free / RoHS | — | Yes (N suffix) |
| Moisture Sensitivity Level | — | MSL3 (per J-STD-020) |