EP3C40F780C8 vs EP3C40F780C7N Comparación
Comparación detallada lado a lado de EP3C40F780C8 por Intel y EP3C40F780C7N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP3C40F780C8 | EP3C40F780C7N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $99,95 | $145,40 |
| Family | Cyclone III | Cyclone III |
| Series | EP3C40 | — |
| Logic Elements | 39,600 | 39,600 LE |
| Total Memory Bits | 1,161,216 bits (1134 Kbit) | — |
| Embedded Memory | M9K blocks, 486 Kbit total (per family datasheet) | — |
| Embedded 18x18 Multipliers | 126 | — |
| General Purpose PLLs | 4 | — |
| Global Clock Networks | 20 | 20 |
| Maximum User I/O Pins | 535 | — |
| Process Technology | 65 nm low-power CMOS | — |
| Encapsulado | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (FineLine BGA) |
| Speed Grade | C8 (commercial, -40C to +85C operating range per 'C' designator family convention) | 7 (C7, commercial) |
| User I/O Banks | [DATA_NEEDED: user I/O bank count] | — |
| Supported Memory Interfaces | DDR, DDR2, QDRII SRAM (via dedicated PHY) | — |
| Configuration | Serial (AS) / Parallel (AP) / JTAG | — |
| Estado RoHS | Compliant | — |
| Tipo de montaje | Surface Mount (BGA) | — |
| Total RAM Bits | — | 1,161,216 bits |
| Embedded Multipliers | — | 126 (18x18) |
| User I/Os | — | 535 |
| Process Node | — | 65 nm TSMC low-power |
| Temperatura de funcionamiento | — | 0C to +85C (commercial) |
| Supply Voltage (Core) | — | 1.2 V |
| Configuration Method | — | JTAG, Active Serial, Passive Serial |
| PLLs | — | 4 |
| Lead-Free / RoHS | — | Yes (N suffix) |
| Moisture Sensitivity Level | — | MSL3 (per J-STD-020) |