EP3SE260F1152C4N vs EP3SE260F1152C3N Vergleich

Detaillierter Direktvergleich von EP3SE260F1152C4N von Intel und EP3SE260F1152C3N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3SE260F1152C4N EP3SE260F1152C3N
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Obsolete Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1.620,00 $7.500,00
Series Stratix III E Stratix III E
Family Stratix III (Enhanced) —
Logic Elements (LEs) 255,000 —
Embedded Memory 16,672,768 bits (16.67 Mbit) —
Maximum User I/Os 744 —
Number of LABs/CLBs 10,200 —
DSP / 18x18 Multipliers 768 embedded multipliers —
Process Technology 65 nm CMOS 65 nm
Core Voltage 1.1 V 1.1 V
Maximum Operating Frequency 450 MHz —
Gehäuse 1152-ball FC-FBGA (flip-chip) 1152-BBGA, FCBGA
Speed Grade -4 (commercial temperature) —
Betriebstemperatur 0C to +85C (commercial, 'C' suffix) 0 C to +85 C (Commercial)
Montageart Surface Mount (BGA) Surface Mount
Packaging Tray —
Lead-Free / RoHS Lead-free finish (RoHS compliant per distributor listing) —
Speichertyp SRAM-based, volatile (requires configuration device) —
Configuration External EPCS / enhanced configuration via AS, PS, JTAG, or FPP —
Product Status Obsolete (per Xecor cross-reference data) —
Logic Elements / Cells — 255,000
Embedded Memory Bits — 16,672,768 bits
Logic Array Blocks (LABs) — 10,200
User I/O Count — 744
Transceivers — Integrated high-speed transceivers
DSP Blocks — Yes (dedicated multiplier/accumulator)
Embedded Memory Type — TriMatrix (true dual-port, FIFO, ROM, RAM)
External Memory Support — DDR3, DDR2, QDR II+, RLDRAM II
Configuration Modes — AS, AP, PS, FPP, JTAG
Partial Reconfiguration — Supported
Programmable Power Technology — Yes (up to 50% dynamic power reduction)
RoHS-Status — Compliant

Datenblätter & Ressourcen

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