EP3SE260F1517C4N vs EP3SE260F1517I3N Vergleich
Detaillierter Direktvergleich von EP3SE260F1517C4N von Intel und EP3SE260F1517I3N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP3SE260F1517C4N | EP3SE260F1517I3N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | NRND | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $7.800,00 | $2.275,00 |
| Series | Stratix® III E | — |
| Family | Field-Programmable Gate Array (FPGA) | Stratix® III E |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory | 16,672,768 bits | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| Maximum User I/Os | 976 | — |
| Gehäuse | 1517-BBGA, FCBGA | 1517-ball FC-FBGA |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | 0°C to 85°C | — |
| Core Voltage | 0.9 V | 1.1 V |
| Process Node | 65 nm | — |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Lead Free | [DATA_NEEDED: lead-free status] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Transceiver Data Rate | 12.5 Gbps | — |
| Embedded Memory Bits | — | 16,672,768 bits |
| User I/O Count | — | 976 |
| Process Technology | — | 65 nm |
| Speed Grade | — | -3 (fastest) |
| Temperature Grade | — | Industrial (I): -40 °C to +100 °C |
| Betriebs-Sperrschichttemperatur | — | -40 °C to +100 °C |
| Configuration Method | — | JTAG / Passive Serial / Active Serial |
| Lead-Free | — | Yes |
| Internal Logic Performance | — | Up to 500 MHz |
| Memory Subsystems | — | M9K + M144K block RAM, DDR2/DDR3/QDR II+ controllers |
| DSP Blocks | — | Yes (dedicated multiply-accumulate) |