EP4CE40U19A7N vs EP4CE115F23C8N Vergleich
Detaillierter Direktvergleich von EP4CE40U19A7N von Intel und EP4CE115F23C8N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP4CE40U19A7N | EP4CE115F23C8N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $112,20 | $145,00 |
| Series | Cyclone IV E | Cyclone IV E |
| Family | EP4CE40 | — |
| Logic Elements (LE) | 39,600 | — |
| Embedded Memory (bits) | 1,161,216 (113 Kbytes) | — |
| Embedded Multipliers (18x18) | 116 | — |
| M9K Memory Blocks | 66 | — |
| Maximum User I/O | 328 | — |
| PLLs | 4 | — |
| Global Clock Networks | 20 | — |
| Gehäuse | 484-ball FBGA (U19) | 484-ball FineLine BGA (F23) |
| Grade | Automotive (A7 = -40C to 125C TJ) | — |
| Process Technology | 60 nm low-power CMOS | — |
| Betriebs-Sperrschichttemperatur | -40C to +125C | — |
| Storage Temperature | -65C to +150C | — |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS), Fast Passive Parallel (FPP) | — |
| External Memory Support | DDR/DDR2 SDRAM, QDRII SRAM | — |
| I/O Standards | LVDS, SSTL, HSTL, PCI, LVTTL, LVCMOS | — |
| RoHS-Status | Compliant | Compliant |
| Logic Elements | — | 114,480 LE |
| Embedded Memory | — | 3,981,312 bits (3.8 Mbit) |
| User I/O Count | — | 280 |
| Number of Logic Array Blocks (LABs) | — | [DATA_NEEDED: LAB count] |
| Embedded 18x18 Multipliers | — | 432 |
| General-purpose PLLs | — | 4 |
| Process Node | — | 60 nm |
| Core Voltage | — | 1.2 V |
| Ball Pitch | — | 1.0 mm |
| Montageart | — | Surface Mount (BGA) |
| Betriebstemperatur | — | 0C to +85C (Commercial) |
| Speed Grade | — | C8 |