EP4CE40U19A7N vs EP4CE115F23C8N Comparación
Comparación detallada lado a lado de EP4CE40U19A7N por Intel y EP4CE115F23C8N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP4CE40U19A7N | EP4CE115F23C8N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $112,20 | $145,00 |
| Series | Cyclone IV E | Cyclone IV E |
| Family | EP4CE40 | — |
| Logic Elements (LE) | 39,600 | — |
| Embedded Memory (bits) | 1,161,216 (113 Kbytes) | — |
| Embedded Multipliers (18x18) | 116 | — |
| M9K Memory Blocks | 66 | — |
| Maximum User I/O | 328 | — |
| PLLs | 4 | — |
| Global Clock Networks | 20 | — |
| Encapsulado | 484-ball FBGA (U19) | 484-ball FineLine BGA (F23) |
| Grade | Automotive (A7 = -40C to 125C TJ) | — |
| Process Technology | 60 nm low-power CMOS | — |
| Temperatura de unión de funcionamiento | -40C to +125C | — |
| Storage Temperature | -65C to +150C | — |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS), Fast Passive Parallel (FPP) | — |
| External Memory Support | DDR/DDR2 SDRAM, QDRII SRAM | — |
| I/O Standards | LVDS, SSTL, HSTL, PCI, LVTTL, LVCMOS | — |
| Estado RoHS | Compliant | Compliant |
| Logic Elements | — | 114,480 LE |
| Embedded Memory | — | 3,981,312 bits (3.8 Mbit) |
| User I/O Count | — | 280 |
| Number of Logic Array Blocks (LABs) | — | [DATA_NEEDED: LAB count] |
| Embedded 18x18 Multipliers | — | 432 |
| General-purpose PLLs | — | 4 |
| Process Node | — | 60 nm |
| Core Voltage | — | 1.2 V |
| Ball Pitch | — | 1.0 mm |
| Tipo de montaje | — | Surface Mount (BGA) |
| Temperatura de funcionamiento | — | 0C to +85C (Commercial) |
| Speed Grade | — | C8 |