EP4CE55F23I7N vs EP4CE75F23I7N Vergleich

Detaillierter Direktvergleich von EP4CE55F23I7N von Intel und EP4CE75F23I7N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP4CE55F23I7N EP4CE75F23I7N
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $130,40 $118,00
Series Cyclone IV E —
Logic Elements 55,856 —
Configurable Logic Blocks (CLBs) 3,491 —
Embedded Memory 2,396,160 bits —
Embedded 18x18 Multipliers 56 15
PLLs 4 4
Maximum User I/O 324 —
Gehäuse 484-ball FBGA (23x23 mm, 1.0 mm pitch) 484-ball FBGA (F23, 23 mm body, 1.0 mm pitch)
Process Technology TSMC 60 nm low-power 60 nm low-power CMOS
Core Voltage 1.2 V —
Betriebstemperatur -40C to +100C (industrial, I7 grade) —
Montageart Surface Mount (BGA) —
Lead-Free / RoHS Yes (lead-free finish) —
Configuration Modes JTAG, AS, PS, FPP Active Serial (AS), Passive Serial (PS), JTAG
Memory Interface Support DDR, DDR2, QDRII —
Product Line — Cyclone IV E
Family — Cyclone IV E (EP4CE)
Logic Elements (LEs) — 75,408
Logic Array Blocks (LABs) — 4,713
Embedded Memory Bits — 2,810,880 bits (312 M9K blocks)
Distributed RAM Bits — 200 Kbits
Global Clocks — [DATA_NEEDED: global clock network count]
Maximum User I/Os — 292
Core Voltage (VCCINT) — 1.2 V nominal
I/O Voltage (VCCIO) — 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank)
Operating Temperature Grade — Industrial (I7: -40C to +100C Tj)
External Memory Interfaces — DDR / DDR2 SDRAM, QDRII SRAM
Design Software — Quartus II / Quartus Prime
RoHS-Status — Compliant

Datenblätter & Ressourcen

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