EP4CGX110DF31C8N vs EP4CGX110DF31I7 Vergleich

Detaillierter Direktvergleich von EP4CGX110DF31C8N von Intel und EP4CGX110DF31I7 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP4CGX110DF31C8N EP4CGX110DF31I7
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $325,00 $276,34
Family Cyclone IV GX —
Logic Elements 109,424 —
Logic Array Blocks (LABs) 6,839 —
Embedded Memory Bits 5,621,760 (approximately 702 Kbits) —
Embedded Memory Blocks M9K blocks, 9-bit parity —
DSP Blocks (18x18 Multipliers) 264 multipliers —
Maximum User I/Os 475 —
I/O Banks 8 —
PLLs 4 general-purpose PLLs 4
Transceivers 8 high-speed transceivers up to 3.125 Gbps 8 (up to 3.125 Gbps)
PCI Express Hard IP PCIe Gen1/Gen2 x1/x2/x4 —
Core Supply Voltage 1.2 V —
Process Technology 60 nm low-power CMOS —
Gehäuse 896-ball FineLine BGA (F31), 31 mm 896-BGA (FBGA-896), 31 mm
Operating Temperature (Commercial) 0C to 85C —
Speed Grade 8 -7
Configuration SRAM-based, supports AS, PS, JTAG, FPP —
RoHS-Status Compliant Compliant
Series — Cyclone IV GX
Device Logic Elements — 109,424
Total Memory Bits — 5,621,760
Number of Logic Array Blocks (LABs) — Not specified in provided data [DATA_NEEDED: LAB count]
Number of I/O — 475 user I/O
Multipliers (18x18) — 432
M9K Memory Blocks — 270
Ball Pitch — 0.8 mm
Temperature Grade — Industrial (-40C to +100C Tj)
Core Voltage — 1.2 V typical
Configuration Method — SRAM (EPCS or JTAG)
Montageart — Surface Mount
MSL-Level — 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days]

Datenblätter & Ressourcen

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