EPF10K100EFC484-3N vs EPF10K100EFC484-3 Vergleich
Detaillierter Direktvergleich von EPF10K100EFC484-3N von Intel und EPF10K100EFC484-3 von Altera. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EPF10K100EFC484-3N | EPF10K100EFC484-3 |
|---|---|---|
| Marke | Intel | Altera |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Obsolete | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $142,00 | $65,00 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements / Cells | 4992 | — |
| Total Gates | 100,000 | — |
| Embedded Memory (EAB) | 49,152 bits (12 EABs) | — |
| Logic Array Blocks (LABs) | 624 | 624 |
| User I/Os | 338 | — |
| Process Technology | 0.22 µm CMOS | — |
| Core Voltage (VCCINT) | 2.5 V | — |
| I/O Voltage (VCCIO) | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) | — |
| Internal Performance | 200 MHz | — |
| Speed Grade | -3 (fastest commercial bin) | -3 (fastest commercial) |
| Gehäuse | 484-ball FineLine BGA (FC484 / FBGA-484) | 484-ball FineLine BGA |
| Temperature Grade | Commercial (0 °C to +70 °C) | — |
| Configuration Method | SRAM (external EPROM/Flash/JTAG required at power-up) | SRAM (volatile, requires configuration device) |
| Lead-Free / RoHS | Yes (N suffix = lead-free) | — |
| Montageart | Surface Mount (BGA) | — |
| Typical Gates | — | 100,000 |
| Maximum System Gates | — | 158,000 |
| Logic Elements | — | 4,992 |
| Embedded Memory (EAB RAM) | — | 49,152 bits |
| User I/O Pins | — | 338 |
| Betriebstemperatur | — | 0C to +70C (Commercial) |
| Core Voltage | — | 2.5 V |
| I/O Standards Supported | — | 2.5V / 3.3V / 5.0V (PCI-compliant) |
| JTAG Support | — | IEEE Std. 1149.1-1990 BST |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |