EPF10K100EFC484-3N vs EPF10K100EFC484-3 비교
다음의 상세 나란히 비교: EPF10K100EFC484-3N 제조: Intel 및 EPF10K100EFC484-3 제조: Altera. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EPF10K100EFC484-3N | EPF10K100EFC484-3 |
|---|---|---|
| 브랜드 | Intel | Altera |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | Obsolete | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $142.00 | $65.00 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements / Cells | 4992 | — |
| Total Gates | 100,000 | — |
| Embedded Memory (EAB) | 49,152 bits (12 EABs) | — |
| Logic Array Blocks (LABs) | 624 | 624 |
| User I/Os | 338 | — |
| Process Technology | 0.22 µm CMOS | — |
| Core Voltage (VCCINT) | 2.5 V | — |
| I/O Voltage (VCCIO) | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) | — |
| Internal Performance | 200 MHz | — |
| Speed Grade | -3 (fastest commercial bin) | -3 (fastest commercial) |
| 패키지 | 484-ball FineLine BGA (FC484 / FBGA-484) | 484-ball FineLine BGA |
| Temperature Grade | Commercial (0 °C to +70 °C) | — |
| Configuration Method | SRAM (external EPROM/Flash/JTAG required at power-up) | SRAM (volatile, requires configuration device) |
| Lead-Free / RoHS | Yes (N suffix = lead-free) | — |
| 실장 유형 | Surface Mount (BGA) | — |
| Typical Gates | — | 100,000 |
| Maximum System Gates | — | 158,000 |
| Logic Elements | — | 4,992 |
| Embedded Memory (EAB RAM) | — | 49,152 bits |
| User I/O Pins | — | 338 |
| 동작 온도 | — | 0C to +70C (Commercial) |
| Core Voltage | — | 2.5 V |
| I/O Standards Supported | — | 2.5V / 3.3V / 5.0V (PCI-compliant) |
| JTAG Support | — | IEEE Std. 1149.1-1990 BST |
| RoHS 상태 | — | [DATA_NEEDED: RoHS status] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |