EPM570F256I5N vs EPM570GF256I5 Vergleich
Detaillierter Direktvergleich von EPM570F256I5N von Intel und EPM570GF256I5 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EPM570F256I5N | EPM570GF256I5 |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $19,85 | $27,62 |
| Family | MAX II | MAX II |
| Logic Elements | 570 | 570 |
| Macrocells | 440 | — |
| User I/O Count | 160 | — |
| User Flash Memory | 8 kbits (9220 bits) | — |
| Pin-to-Pin Delay (tPD1) | 5.4 ns | — |
| Maximum Internal Frequency | 304 MHz | — |
| Global Clock Networks | 4 | — |
| Global Clear/Reset Signals | 2 | — |
| Core Voltage (VCCINT) | 1.8 V | — |
| I/O Voltage (VCCIO) | 1.5 V / 1.8 V / 2.5 V / 3.3 V (multiVolt) | — |
| Gehäuse | 256-ball FineLine BGA (17 mm x 17 mm) | 256-ball FBGA (FineLine BGA), 17 x 17 mm, 1.0 mm pitch |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40C to +100C (TJ, industrial) | — |
| Programming Interface | JTAG (IEEE 1149.1) / ISP (IEEE 1532) | — |
| Configuration Memory | Internal Flash (non-volatile, instant-on) | — |
| RoHS-Status | Compliant (N suffix = Pb-free) | Lead-free (per FindIC listing) |
| Device Type | — | CPLD - Complex Programmable Logic Device |
| Equivalent Macrocells | — | 440 |
| Number of I/O | — | 160 |
| Number of Logic Blocks | — | [DATA_NEEDED: number of logic blocks] |
| Propagation Delay tPD (max) | — | 5.4 ns |
| User Flash Memory (UFM) | — | 8 Kbits |
| Programmable Type | — | In System Programmable |
| Non-Volatile Memory | — | Yes (Flash-based) |
| Internal Supply Voltage | — | 1.71 V to 1.89 V |
| I/O Standards Supported | — | LVTTL, LVCMOS 1.5/1.8/2.5/3.3 V |
| Betriebstemperaturbereich | — | -40 °C to 100 °C (Industrial) |
| JTAG Support | — | IEEE 1149.1 boundary-scan |
| Process Technology | — | 0.18 µm 6-layer-metal flash CMOS |