ESD5481MUT3G vs TPD2E001DRLR Vergleich

Detaillierter Direktvergleich von ESD5481MUT3G von onsemi und TPD2E001DRLR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ESD5481MUT3G TPD2E001DRLR
Marke onsemi Texas Instruments
Kategorie Surge Protectors Surge Protectors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,14 $0,16
Manufacturer onsemi —
Product Type Bidirectional ESD Protection TVS / Zener Diode —
Working Voltage (VRWM) 5 V —
Clamping Voltage (VC) at 2 A (8/20 us) 15 V —
Peak Pulse Current (IPP) 2 A (8/20 us) —
Polarity Bidirectional —
Gehäuse X3-DFN-2 (0.6 x 0.3 mm) SOT-5 (DRL) 1.6 x 1.6 mm
Anzahl der Pins 2 —
Montageart Surface Mount Surface Mount
ESD Protection Best-in-class per onsemi datasheet —
Response Time Sub-nanosecond (typical of TVS avalanche) —
Application Portable consumer electronics, cellular phones, MP3 players, digital cameras —
RoHS-Status Compliant Compliant
Lead-Free Yes Yes
Betriebstemperatur [DATA_NEEDED: operating temperature range] -40C to +85C
Leakage Current [DATA_NEEDED: leakage current at VRWM] —
Kanäle — 2
Working Voltage (Vrwm) — 5.5 V
Typical Clamping Voltage — 16 V
Channel Capacitance (typ) — 1.5 pF
Dynamic Resistance (Rdyn) — 1.2 ohm
ESD Rating (HBM) — ±15 kV
ESD Rating (IEC 61000-4-2, contact) — ±8 kV
IEC 61000-4-2 Level — Level 4
Leakage Current (max) — [DATA_NEEDED: leakage current at Vrwm]
Breakdown Voltage (Vbr) — [DATA_NEEDED: Vbr min/typ/max]
Peak Pulse Current (Ipp) — [DATA_NEEDED: peak pulse current]
MSL-Level — Level 1

Datenblätter & Ressourcen

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