GAN111-650WSB vs IGLD60R070D1AUMA3 Vergleich

Detaillierter Direktvergleich von GAN111-650WSB von Nexperia und IGLD60R070D1AUMA3 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Nexperia
GAN111-650WSB GAN111-650WSB - 650V 97mΩ GaN FET TO-247 | Nexperia

GAN111-650WSB - 650V 97mΩ GaN FET TO-247 | Nexperia

GAN111-650WSB ✓ Aktiv

Spezifikationsvergleich

Parameter GAN111-650WSB IGLD60R070D1AUMA3
Marke Nexperia Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,95 $5,10
Manufacturer Nexperia —
Drain-Source Voltage (VDS) 650 V 600 V
On-Resistance RDS(on) (typ) 97 mΩ —
Continuous Drain Current (ID, at Ta) 21 A —
Power Dissipation (PD, at Ta) 107 W —
Technology GaN HEMT H2 (cascode, normally-off) GaN HEMT (enhancement-mode, normally-off)
Polarity / Channel Type N-Channel —
Gehäuse TO-247 (SOT429) through-hole, 3-lead PG-LSON-8-1 (LSON-8 with exposed pad)
Montageart Through Hole Surface Mount
Configuration Single FET —
Gate Drive Compatibility Standard silicon MOSFET gate drive (0-12 V typical) —
Operating Mode Normally-off (cascode) —
Target Applications SMPS, PFC, OBC, solar inverter, industrial drives —
RoHS-Status Compliant Compliant
Orderable Part Suffix WSBQ (tape-and-reel/ammopack) —
Continuous Drain Current (ID, Tc) — 15 A
Power Dissipation (PD, Tc) — 114 W
On-Resistance (RDS(on)) — 70 mΩ (typical, VGS = 10 V)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Output Charge (Qoss) — [DATA_NEEDED: Qoss]
Reverse Recovery Charge (Qrr) — Near zero (GaN technology)
Input Capacitance (Ciss) — 380 pF @ 400 V (per Utmel)
MSL-Level — 3
Halogenfrei — Yes
Operating Temperature (Tj) — [DATA_NEEDED: Tj max]
Series — CoolGaN™
Polarity — N-Channel
Packaging — Tape & Reel
Factory Pack Quantity — 3000

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