GAN111-650WSB vs IGLD60R070D1AUMA3 比較
詳細な並列比較: GAN111-650WSB メーカー: Nexperia および IGLD60R070D1AUMA3 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | GAN111-650WSB | IGLD60R070D1AUMA3 |
|---|---|---|
| ブランド | Nexperia | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.95 | $5.10 |
| Manufacturer | Nexperia | — |
| Drain-Source Voltage (VDS) | 650 V | 600 V |
| On-Resistance RDS(on) (typ) | 97 mΩ | — |
| Continuous Drain Current (ID, at Ta) | 21 A | — |
| Power Dissipation (PD, at Ta) | 107 W | — |
| Technology | GaN HEMT H2 (cascode, normally-off) | GaN HEMT (enhancement-mode, normally-off) |
| Polarity / Channel Type | N-Channel | — |
| パッケージ | TO-247 (SOT429) through-hole, 3-lead | PG-LSON-8-1 (LSON-8 with exposed pad) |
| 実装タイプ | Through Hole | Surface Mount |
| Configuration | Single FET | — |
| Gate Drive Compatibility | Standard silicon MOSFET gate drive (0-12 V typical) | — |
| Operating Mode | Normally-off (cascode) | — |
| Target Applications | SMPS, PFC, OBC, solar inverter, industrial drives | — |
| RoHS ステータス | Compliant | Compliant |
| Orderable Part Suffix | WSBQ (tape-and-reel/ammopack) | — |
| Continuous Drain Current (ID, Tc) | — | 15 A |
| Power Dissipation (PD, Tc) | — | 114 W |
| On-Resistance (RDS(on)) | — | 70 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Output Charge (Qoss) | — | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | — | Near zero (GaN technology) |
| Input Capacitance (Ciss) | — | 380 pF @ 400 V (per Utmel) |
| MSLレベル | — | 3 |
| ハロゲンフリー | — | Yes |
| Operating Temperature (Tj) | — | [DATA_NEEDED: Tj max] |
| Series | — | CoolGaN™ |
| Polarity | — | N-Channel |
| Packaging | — | Tape & Reel |
| Factory Pack Quantity | — | 3000 |