H5AN4G6NBJR-UHC vs H5AN4G6NBJR-PBC Vergleich
Detaillierter Direktvergleich von H5AN4G6NBJR-UHC von SK hynix und H5AN4G6NBJR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G6NBJR-UHC | H5AN4G6NBJR-PBC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,09 | $6,60 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Speichergröße | 4 Gbit | — |
| Speicherorganisation | 256M x 16 | 256M x 16 (268435456 words x 16 bits) |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V |
| Technology | CMOS | — |
| Betriebstemperatur | -40C to +95C | [DATA_NEEDED: temperature range for -C grade] |
| Gehäuse | FBGA-96 (PBGA-96) | FBGA-96 (PBGA96), rectangular |
| Montageart | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | — |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes (command/address CRC) | — |
| RoHS-Status | Compliant | — |
| Memory Density | — | 4 Gbit |
| Schnittstelle | — | DDR4 (double data rate, synchronous) |
| Package Code | — | TFBGA |
| Number of Terminals | — | 96 |
| Eigenschaften | — | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC |
| Data Rate / Speed Grade | — | [DATA_NEEDED: speed grade PBC data rate] |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency for PBC speed grade] |
| Process | — | CMOS |
| Lead-Free / Halogen-Free | — | Yes (per family datasheet, Lead-Free & Halogen-Free) |
| Temperature Grade | — | OTHER (per distributor listing) |