H5AN4G8NBJR-VKIR vs H5AN4G8NBJR-RDC Vergleich
Detaillierter Direktvergleich von H5AN4G8NBJR-VKIR von SK hynix und H5AN4G8NBJR-RDC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G8NBJR-VKIR | H5AN4G8NBJR-RDC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,98 | $2,95 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Speicherorganisation | 512M x 8 | 512M x 8 |
| Datenrate | 2666 Mbps per pin | [DATA_NEEDED: speed grade Mbps] |
| Supply Voltage (VDD) | 1.2 V | — |
| Gehäuse | 78-ball FBGA | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Operating Temperature (Industrial) | -40C to +85C (case) | — |
| Extended Temperature Range | +85C to +95C (case, per datasheet conditions) | — |
| Technology | CMOS DRAM | — |
| Product Family | H5AN4G4/6/8NBJR series | — |
| Speed Grade Code | -VKI | — |
| Packing Suffix | R (Tape & Reel) | — |
| VPP Supply | [DATA_NEEDED: VPP supply voltage] | — |
| CAS-Latenz | [DATA_NEEDED: CAS latency] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Refresh | [DATA_NEEDED: refresh interval specification] | Auto-refresh and self-refresh |
| Schnittstelle | — | DDR4 (Double Data Rate IV) |
| Versorgungsspannung | — | [DATA_NEEDED: VDD supply voltage] |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Termination | — | On-Die Termination (ODT) |
| RoHS-Status | — | Lead-Free & Halogen-Free (RoHS Compliant) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |