H5AN4G8NBJR-VKIR vs H5AN4G8NBJR-RDC Comparación
Comparación detallada lado a lado de H5AN4G8NBJR-VKIR por SK hynix y H5AN4G8NBJR-RDC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5AN4G8NBJR-VKIR | H5AN4G8NBJR-RDC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,98 | $2,95 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organización de memoria | 512M x 8 | 512M x 8 |
| Velocidad de datos | 2666 Mbps per pin | [DATA_NEEDED: speed grade Mbps] |
| Supply Voltage (VDD) | 1.2 V | — |
| Encapsulado | 78-ball FBGA | 78-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Operating Temperature (Industrial) | -40C to +85C (case) | — |
| Extended Temperature Range | +85C to +95C (case, per datasheet conditions) | — |
| Technology | CMOS DRAM | — |
| Product Family | H5AN4G4/6/8NBJR series | — |
| Speed Grade Code | -VKI | — |
| Packing Suffix | R (Tape & Reel) | — |
| VPP Supply | [DATA_NEEDED: VPP supply voltage] | — |
| Latencia CAS | [DATA_NEEDED: CAS latency] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Refresh | [DATA_NEEDED: refresh interval specification] | Auto-refresh and self-refresh |
| Interfaz | — | DDR4 (Double Data Rate IV) |
| Tensión de alimentación | — | [DATA_NEEDED: VDD supply voltage] |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Termination | — | On-Die Termination (ODT) |
| Estado RoHS | — | Lead-Free & Halogen-Free (RoHS Compliant) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |