H5AN8G4NAFR-VKC vs H5AN8G4NAFR-PBC Vergleich
Detaillierter Direktvergleich von H5AN8G4NAFR-VKC von SK hynix und H5AN8G4NAFR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G4NAFR-VKC | H5AN8G4NAFR-PBC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,98 | $3,55 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Speicherorganisation | 2G x 4 | 2Gb x 4 |
| Datenrate | 2666 Mbps per pin (DDR4-2666) | — |
| CAS Latency (CL) | 19 (CL19, speed bin VK) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Gehäuse | 78-ball FBGA (PBGA78) | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Technology | CMOS | CMOS |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Application | Main memory requiring large density and high bandwidth | — |
| Datasheet Revision | Rev. 1.2 (Jul. 2017) | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | — |
| Interface Voltage (VDD/VDDQ) | — | 1.2 V +/- 0.06 V |
| Wordline Pump Voltage (VPP) | — | 2.5 V (+0.25/-0.125 V) |
| Speed Bins (per datasheet) | — | DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) |
| Bank Groups | — | 4 (BG0-BG1) |
| Banks | — | 16 (4 bank groups x 4 banks) |
| Row Address | — | A0-A16 (17 bits) |
| Lead-Free / Halogen-Free | — | Yes (RoHS Compliant per datasheet) |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| CAS-Latenz | — | [DATA_NEEDED: CL for PBC speed bin] |
| Geardown Mode Note | — | DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled |