H5AN8G4NAFR-VKC - 8Gb DDR4-2666 SDRAM 2Gx4 | SK hynix
Teilenummer: H5AN8G4NAFR-VKC ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.9 | $39,00 |
| 100 | $3.55 | $355,00 |
| 500 | $3.25 | $1.625,00 |
| 1.000 | $2.98 | $2.980,00 |
H5AN8G4NAFR-VKC Übersicht
DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory. A DRAM stores each bit in a capacitor-based cell and requires periodic refresh, but delivers far higher density and lower cost per bit than SRAM. In the memory hierarchy, DRAM sits between CPU caches (SRAM) and storage (NAND flash), serving as the primary working memory of servers, desktops, industrial controllers, and embedded computing modules.
Key features of this device include 8Gb density per monolithic die, a x4 organization suited to ECC-protected and high-reliability server memory subsystems, and a 2666 Mbps data rate per pin (speed bin VK, CL19). The part belongs to the H5AN8G4NAFR-xxC family, which shares common die and footprint definitions with 8Gb x8 (H5AN8G8NAFR-xxC) and 8Gb x16 (H5AN8G6NAFR-xxC) siblings, simplifying multi-width platform designs. It operates from a single 1.2V VDD/VDDQ rail, consistent with the DDR4 JEDEC standard, reducing power versus 1.5V DDR3 predecessors.
The device targets server main memory (ECC DIMMs, RDIMM/LRDIMM modules), desktop and workstation UDIMMs, industrial computing modules, and replacement sourcing for legacy DDR4-2666 designs. The x4 organization is particularly valued in ECC server memory where 72-bit wide buses aggregate eighteen x4 devices with inline ECC.
In a design, DDR4 devices require careful address/command bus termination, fly-by topology on multi-device modules, matched trace lengths, and a clean 1.2V rail with per-device decoupling. Signal integrity at 2666 Mbps demands controlled impedance and simulation of the address/command and DQ/DQS networks.
This page synthesizes verified distributor and datasheet data with drop-in alternatives, design guidance, and procurement context not consolidated in the manufacturer datasheet alone.
Drop-in-Alternativen für H5AN8G4NAFR-VKC – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit H5AN8G4NAFR-VKC (gleiche Bauform und Footprint) – abweichend in Organization, Package, RoHS Status, Interface, Density.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
H5AN8G4NAFR-RDC
✅ Drop-In✓ Auf Lager
$2.3 / Stück
Datenblatt ansehen →H5AN8G4NAFR-PBC
✅ Drop-In✓ Auf Lager
$3.55 / Stück
Datenblatt ansehen →H5AN8G4NAFR-UHC
✅ Drop-In✓ Auf Lager
$3.05 / Stück
Datenblatt ansehen →H5AN8G8NAFR-VKC
✅ Drop-In✓ Auf Lager
$4.15 / Stück
Datenblatt ansehen →H5AN8G6NAFR-VKC
✅ Drop-In✓ Auf Lager
$6.25 / Stück
Datenblatt ansehen →H5AN8G8NAFR-UHC
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →H5AN8G4NAFR-VKC Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Density | 8 Gb |
| Speicherorganisation | 2G x 4 |
| Datenrate | 2666 Mbps per pin (DDR4-2666) |
| CAS Latency (CL) | 19 (CL19, speed bin VK) |
| Supply Voltage (VDD) | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Gehäuse | 78-ball FBGA (PBGA78) |
| Montageart | Surface Mount |
| Technology | CMOS |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free) |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Application | Main memory requiring large density and high bandwidth |
| Datasheet Revision | Rev. 1.2 (Jul. 2017) |
H5AN8G4NAFR-VKC 78-ball fbga (pbga78) Pinbelegungsleitfaden
Pinbelegung für H5AN8G4NAFR-VKC (78-ball fbga (pbga78)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für H5AN8G4NAFR-VKC.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
H5AN8G4NAFR-VKC ist geeignet für 6 Anwendungs: ECC Server Main Memory, Industrial Computing Modules, Desktop and Workstation UDIMMs, Networking and Communications Equipment, Test and Measurement Instruments, Legacy DDR4-2666 Replacement Sourcing.
ECC Server Main Memory
Server memory subsystems use x4 DDR4 devices because a 72-bit data bus built from eighteen H5AN8G4NAFR-VKC devices enables single-device error correction (chipkill-class protection). Its 2666 Mbps per-pin rate and CL19 timing align with server DDR4-2666 memory controllers from Intel Xeon and AMD EPYC platforms, and the 8Gb density allows 16 GB per single-rank 18-device bus. The 1.2V rail reduces power per module compared with DDR3. Designers must implement fly-by address/command routing, per-rank ODT programming, and SPD data matching the VK speed bin for BIOS training. The trade-off versus x8 devices is a higher component count, justified by stronger error coverage in always-on server workloads.
Empfohlen
Industrial Computing Modules
Industrial controllers and embedded computing modules use the H5AN8G4NAFR-VKC as memory-down DRAM for Linux- or RTOS-based control platforms. The 8Gb density supports data buffering, logging, and vision or motion workloads without external storage round-trips, while the 1.2V DDR4 interface matches modern embedded SoCs and Intel Atom or ARM-class industrial CPUs with DDR4-2666 controllers. The x4 organization is useful where controller ECC protects long-uptime systems in factories. Layout requires matched fly-by routing and solid 1.2V planes; the RoHS-compliant, lead-free, halogen-free build meets industrial environmental compliance requirements. Designers should verify the SoC memory controller supports the VK (2666, CL19) timing parameters.
Empfohlen
Desktop and Workstation UDIMMs
Desktop and workstation unbuffered DIMMs populate eight or sixteen H5AN8G4NAFR-VKC devices per 64-bit bus to reach 4-16 GB per rank. The 2666 Mbps VK bin matches mainstream DDR4-2666 JEDEC platform defaults, delivering high bandwidth for productivity and gaming workloads without overclocking-grade bins. Each x4 device contributes four DQ lanes; eight devices span 32 bits per sub-channel in modern two-sub-channel desktop controllers. Module makers must program SPD data with the CL19 timings and implement fly-by clock routing and per-rank ODT. The FBGA-78 package supports standard 0.8 mm-pitch DIMM assembly with lead-free reflow profiles.
Empfohlen
Networking and Communications Equipment
Routers, switches, and network appliances use the H5AN8G4NAFR-VKC for packet buffering, flow tables, and control-plane memory. High-bandwidth forwarding engines benefit from the 2666 Mbps data rate, and the 8Gb density supports large queue structures in aggregation hardware. The x4 organization lets network CPU subsystems build wide ECC-protected buses that tolerate single-bit and single-device failures, essential for telecom uptime targets. Thermal design matters in convection-cooled systems: DRAM junction temperature must be kept within the DDR4 specification, and the FBGA-78 solder joints should be verified against vibration requirements. Designers should confirm the network processor's DDR4 PHY supports the VK timing bin.
Empfohlen
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators require large acquisition memories to buffer captured waveforms. The H5AN8G4NAFR-VKC provides 8Gb per device; banks of devices assembled into 64- or 72-bit buses deliver the gigabyte-class capture memory typical of modern instruments. The 2666 Mbps VK bin sustains the streaming and post-processing bandwidth needed for real-time display updates, while ECC from x4 organization protects long acquisition runs against soft errors. Instrument makers typically mount these devices memory-down near the acquisition FPGA or ASIC. Signal integrity at 2666 Mbps in dense instrument chassis demands careful stackup design, length matching, and full IBIS-based simulation of DQS strobe alignment.
Empfohlen
Legacy DDR4-2666 Replacement Sourcing
Many DDR4 platforms designed in 2016-2018 specified H5AN8G4NAFR-VKC at the DDR4-2666 VK bin, and repair, refurbishment, and second-source programs still need verified replacements. This page consolidates the same-family drop-in options (H5AN8G4NAFR-RDC, -PBC, -UHC share the FBGA-78 footprint and 2G x 4 organization) so buyers can quickly identify parts that solder onto the same land pattern. For exact 2666 Mbps CL19 operation, another VK-bin unit is required; RDC/PBC/UHC units must have the memory controller reconfigured to their lower speed bins. Distributors such as Win Source and netCOMPONENTS list stock and RFQ channels for the VKC suffix as of 2026-09-05.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für H5AN8G4NAFR-VKC – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | H5AN8G4NAFR-RDC | H5AN8G4NAFR-PBC | H5AN8G4NAFR-UHC | H5AN8G8NAFR-VKC | H5AN8G6NAFR-VKC |
|---|---|---|---|---|---|---|
| Package | 78-ball FBGA (PBGA78) | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 2G x 4 | 2G x 4 | 2G x 4 | 2G x 4 | 1G x 8 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| RoHS Compliance | Compliant (Lead-Free & Halogen-Free) | Compliant | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Highest speed bin in family (2666 Mbps, CL19) (vs. H5AN8G4NAFR-UHC)
- x4 organization enables chipkill-class ECC (vs. H5AN8G8NAFR-VKC)
- Common 8Gb family footprint (vs. H5AN8G6NAFR-VKC)
Designhinweise
At 2666 Mbps, DDR4 signal integrity is dominated by fly-by topology and ODT calibration. Route address/command/clock in a fly-by daisy chain across devices with series termination at the controller, and length-match DQ to its DQS within the tolerance allowed by the memory controller training window. Run IBIS or full-channel simulation on the DQ/DQS and CA nets before tape-out; per the SK hynix datasheet, users should also refer to the DRAM supplier datasheet and/or DIMM SPD to confirm feature support such as IPP specifications.
Provide a dedicated, low-impedance 1.2V plane for VDD and VDDQ with local decoupling at each device: a mix of 0.1 uF and 1 uF ceramics within a few millimeters of the FBGA-78 balls, plus bulk capacitance per rail on the board. Estimated: a single 2G x 4 device at full 2666 Mbps activity draws on the order of hundreds of milliwatts; scale rail budgeting by device count and bus utilization from controller power estimation tools rather than datasheet IDD alone. Keep VREF rails clean and separately filtered.
Do not substitute lower speed bins (RDC, PBC, UHC) into a DDR4-2666 CL19 design without reconfiguring the memory controller; the VK suffix specifically denotes the 2666 Mbps CL19 bin per the SK hynix revision history. Also confirm the second-source organization matches the bus width assumption: x4, x8, and x16 family members share the package footprint but not the DQ ball function, so a footprint match alone is not an electrical substitute.
Compliance-Informationen
Per SK hynix datasheet title page: 8Gb DDR4 SDRAM, Lead-Free & Halogen-Free (RoHS Compliant). REACH and conflict-minerals status not stated in verified data.
