H5AN8G6NAFR-PBC vs H5AN8G6NCJR-VKC Vergleich
Detaillierter Direktvergleich von H5AN8G6NAFR-PBC von SK hynix und H5AN8G6NCJR-VKC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G6NAFR-PBC | H5AN8G6NCJR-VKC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,55 | $60,00 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Speicherorganisation | 512M x 16 | 512M x 16 |
| VDD Supply Voltage | 1.20 V +/- 0.06 V | — |
| VDDQ Supply Voltage | 1.20 V +/- 0.06 V | — |
| VPP Supply Voltage | 2.5 V +0.25/-0.125 V | — |
| Schnittstellentyp | DDR4 (parallel, double data rate) | — |
| Speed Bins Supported | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) | — |
| Refresh | Auto / Self Refresh | — |
| DLL | DLL ON mode for speed bin operation | — |
| Clock | Differential clock (CK/CK#) | — |
| Gehäuse | TFBGA-96 (rectangular) | FBGA-96 |
| Number of Terminals | 96 | — |
| Montageart | Surface Mount | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0°C to +95°C |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free) | — |
| Composition | CMOS | — |
| Datenrate | — | 2666 Mbps |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| Operating Current (IDD2N) | — | 28 mA |
| Operating Current (IDD4R) | — | 45 mA |
| Burst Length | — | 8 (BC4) |
| CAS-Latenz | — | [DATA_NEEDED: CAS Latency] |
| Row Address Bits | — | [DATA_NEEDED: Row Address Bits] |
| Column Address Bits | — | [DATA_NEEDED: Column Address Bits] |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |
| RoHS | — | Compliant |