H5AN8G6NCJR-PBC vs H5AN8G6NCJR-VKC Vergleich
Detaillierter Direktvergleich von H5AN8G6NCJR-PBC von SK hynix und H5AN8G6NCJR-VKC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G6NCJR-PBC | H5AN8G6NCJR-VKC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,30 | $60,00 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 8Gb x16 (512M x 16) | — |
| Speichergröße | 8 Gbit | — |
| Datenrate | [DATA_NEEDED: exact speed grade of -PBC suffix] | 2666 Mbps |
| Family Data Rate Range | Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (1.14V to 1.26V) |
| Gehäuse | FBGA-96 (96-ball fine-pitch BGA) | FBGA-96 |
| Montageart | Surface Mount | — |
| Betriebstemperatur | 0C to +95C | 0°C to +95°C |
| Schnittstelle | Parallel, synchronous to both clock edges | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Dynamic On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Lead-Free / Halogen-Free | Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) | — |
| RoHS-Status | Compliant | — |
| Density | — | 8 Gb |
| Speicherorganisation | — | 512M x 16 |
| Operating Current (IDD2N) | — | 28 mA |
| Operating Current (IDD4R) | — | 45 mA |
| Burst Length | — | 8 (BC4) |
| CAS-Latenz | — | [DATA_NEEDED: CAS Latency] |
| Row Address Bits | — | [DATA_NEEDED: Row Address Bits] |
| Column Address Bits | — | [DATA_NEEDED: Column Address Bits] |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |
| RoHS | — | Compliant |