H5AN8G8NAFR-VKC vs H5AN8G8NCJR-VKC Vergleich
Detaillierter Direktvergleich von H5AN8G8NAFR-VKC von SK hynix und H5AN8G8NCJR-VKC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NAFR-VKC | H5AN8G8NCJR-VKC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,15 | $28,13 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM (volatile) |
| Density | 8 Gb | — |
| Speicherorganisation | 1G x 8 | — |
| Speed Grade | DDR4-2666 (VKC bin) | — |
| Supply Voltage (VDD) | 1.2 V | 1.14 V to 1.26 V (1.2 V class) |
| Schnittstelle | SSTL12 | Parallel (DDR4) |
| Burst Length | 8 (BL8) | — |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes (DLL for output skew control) | — |
| Gehäuse | 78-ball FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Process Technology | CMOS | — |
| Recommended Application | Main memory requiring large density and high bandwidth | — |
| Speichergröße | — | 8 Gbit |
| Memory Organization | — | 1G x 8 |
| Datenrate | — | 2666 Mbps/pin |
| Clock Frequency | — | 1.6 GHz |
| Operating Current (typ) | — | 30 mA |
| Standby Current (typ) | — | 3 mA |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| CAS-Latenz | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh period] |