H5AN8G8NCJR-PBC vs H5AN8G8NAFR-VKC Vergleich
Detaillierter Direktvergleich von H5AN8G8NCJR-PBC von SK hynix und H5AN8G8NAFR-VKC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NCJR-PBC | H5AN8G8NAFR-VKC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,40 | $4,15 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Speichergröße | 8 Gb (1 GB) | — |
| Speicherorganisation | 1G x 8 (x8) | 1G x 8 |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) | — |
| Datenrate | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] | — |
| Gehäuse | 78-ball FBGA | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked | — |
| Bank Structure | 8 internal banks, bank-group architecture | — |
| Burst Length | BL8 | 8 (BL8) |
| Eigenschaften | ODT, DM, DQS strobes, programmable CAS latency, self-refresh | — |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) | — |
| RoHS-Status | Lead-Free & Halogen-Free | Compliant (Lead-Free & Halogen-Free) |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | Auto-refresh and self-refresh | — |
| Typical Applications | PC/server main memory, embedded solder-down memory | — |
| Density | — | 8 Gb |
| Speed Grade | — | DDR4-2666 (VKC bin) |
| Schnittstelle | — | SSTL12 |
| Bank Group Architecture | — | Supported (per DDR4 JEDEC architecture) |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes (DLL for output skew control) |
| Process Technology | — | CMOS |
| Recommended Application | — | Main memory requiring large density and high bandwidth |