H5ANAG6NBJR-RDC vs H5ANAG6NCR-PBC Vergleich
Detaillierter Direktvergleich von H5ANAG6NBJR-RDC von SK hynix und H5ANAG6NCR-PBC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NBJR-RDC | H5ANAG6NCR-PBC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,60 | $70,20 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 16Gb x16 | — |
| Density | 16 Gb | 16Gb (2GB) |
| Datenrate | 2666 Mbps (speed grade -RDC) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Schnittstelle | Synchronous, double data rate | — |
| Clocking | Fully synchronous to both clock edges | — |
| Gehäuse | FBGA (Ball Grid Array), surface mount | FBGA-96 |
| Montageart | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Standard | JEDEC DDR4 SDRAM | — |
| Application | Main memory | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | 0C to 85C |
| On-Die Termination (ODT) | Supported (DDR4 feature) | — |
| Bank Group Architecture | DDR4 bank groups (per JEDEC DDR4) | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | Compliant |
| Speicherorganisation | — | x16 (1G x 16) |
| Versorgungsspannung | — | 1.14 V to 1.26 V (nominal 1.2 V) |
| Transfer Rate | — | 3200 Mbps (family, per XNCR datasheet; PBC speed grade [DATA_NEEDED: exact speed grade Mbps]) |
| Number of Terminals | — | 96 balls |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Dynamic ODT | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Maximum Standby Current | — | [DATA_NEEDED: maximum standby current for PBC speed grade] |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency for PBC speed grade] |