H5TC4G63MFR-PBA vs H5TC4G63CFR-PBA Vergleich
Detaillierter Direktvergleich von H5TC4G63MFR-PBA von SK hynix und H5TC4G63CFR-PBA von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5TC4G63MFR-PBA | H5TC4G63CFR-PBA |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,50 | $6,23 |
| Speichertyp | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Speicherorganisation | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | 1.35V +0.100/-0.067V |
| Datenrate | 1866 Mbps (PC3L-14900) | — |
| Gehäuse | 96-ball FBGA | 96-ball FBGA (PBGA96) |
| Number of Banks | 8 | — |
| Burst Length | BL8, BL4 (with burst chop) | — |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Auto Self-Refresh | Yes | Yes |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| Clock Input | — | Fully differential (CK, CK) |
| Data Strobe | — | Differential (DQS, DQS) |
| On-chip DLL | — | Yes |
| Data Mask (DM) | — | Yes |
| Auto Precharge | — | Yes |
| Dynamic ODT | — | Yes |
| Asynchronous Reset | — | Yes |
| RoHS | — | Compliant |
| Halogenfrei | — | Yes |
| Lead-Free | — | Yes |