HI5812KIBZ vs HI5812JIBZ Vergleich
Detaillierter Direktvergleich von HI5812KIBZ von Renesas Electronics und HI5812JIBZ von Renesas Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | HI5812KIBZ | HI5812JIBZ |
|---|---|---|
| Marke | Renesas Electronics | Renesas Electronics |
| Kategorie | ADC/DAC | ADC/DAC |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $7,05 | $3,18 |
| Auflösung | 12 bit | 12 bit |
| Number of Channels | 1 | 1 single-ended input |
| Converter Type | SAR (Successive Approximation) | — |
| Abtastrate | 50 ksps | — |
| Conversion Time | 20 us | 20 us (typical) |
| Versorgungsspannung | 3 V to 6 V (single supply) | — |
| Supply Current (typical) | 1.9 mA | — |
| Input Type | Single-Ended | — |
| Track-and-Hold | Internal | — |
| Data Interface | Parallel (12-bit) | — |
| Architecture | CMOS, charge-redistribution SAR | SAR (Successive Approximation) with internal Track-and-Hold |
| Gehäuse | 24-SOIC (0.295 inch, 7.50 mm width) | — |
| Montageart | Surface Mount | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| INL (typical) | [DATA_NEEDED: INL max in LSB] | — |
| DNL | [DATA_NEEDED: DNL max in LSB] | — |
| Sample Rate | — | 50 kSPS (max) |
| Eingangsspannungsbereich | — | 0 V to VREF (unipolar) |
| Reference Voltage (VREF) | — | [DATA_NEEDED: VREF max] |
| Integral Linearity Error (INL) | — | 1.5 LSB (max) |
| Analog Supply Voltage (VDD) | — | +5 V |
| Digital Interface | — | Parallel, user-selectable 12-bit / 8-bit MSB / 4-bit LSB |
| Ausgangstyp | — | Three-state CMOS, latched across one full conversion |
| Control Inputs/Outputs | — | CONVERT_START (input), DATA_READY (flag) |
| Internal Clock | — | On-chip oscillator |
| Power Dissipation | — | 25 mW |
| Betriebstemperaturbereich | — | -40 C to +85 C |
| Package / Mounting | — | 24-pin SOIC (wide body), surface mount |
| Process Technology | — | High-speed CMOS with thin-film DAC |